Interface optical phonons and their electron-phonon interactions in ZnS/CdS multi-shell spherical quantum dots.

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Bibliographic Details
Title: Interface optical phonons and their electron-phonon interactions in ZnS/CdS multi-shell spherical quantum dots.
Authors: Huang, Wen Deng1, Bao, Li Fu1, Ren, Ya Jie1, Yuan, Zhao Lin1
Source: Superlattices & Microstructures. Apr2018, Vol. 116, p36-43. 8p.
Subjects: Electron-phonon interactions, Phonon spectra, Spherical shells (Engineering), Optical properties of quantum dots, Zinc sulfide, Cadmium sulfide
Abstract: The properties of interface optical phonons and their electron-phonon interactions in ZnS/CdS multi-shell spherical quantum dots are studied by adopting dielectric continuum model. The dispersion curves and electron-phonon coupling strengths for interface optical phonons in ZnS/CdS multi-shell dots are calculated and analyzed in detail. It is shown that the number of interface optical phonon branches increase with the increase of layers of multi-shell quantum dots. The number of interface optical phonons increase two branches for increasing one layer material. The dispersions of interface optical phonon with low quantum number l are weak. The electron-interface optical phonon interactions are mainly localized at hetero-interfaces. The interface optical phonons with low quantum number l have important contribution to electron-interface optical phonon interactions. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:The properties of interface optical phonons and their electron-phonon interactions in ZnS/CdS multi-shell spherical quantum dots are studied by adopting dielectric continuum model. The dispersion curves and electron-phonon coupling strengths for interface optical phonons in ZnS/CdS multi-shell dots are calculated and analyzed in detail. It is shown that the number of interface optical phonon branches increase with the increase of layers of multi-shell quantum dots. The number of interface optical phonons increase two branches for increasing one layer material. The dispersions of interface optical phonon with low quantum number l are weak. The electron-interface optical phonon interactions are mainly localized at hetero-interfaces. The interface optical phonons with low quantum number l have important contribution to electron-interface optical phonon interactions. [ABSTRACT FROM AUTHOR]
ISSN:07496036
DOI:10.1016/j.spmi.2018.02.015