Lee, H., Jang, S., & Chiou, J. (2018). An injection‐locked power oscillator in 0.35 μm SiGe BiCMOS process for power amplifier driver. Microwave & Optical Technology Letters, 60(6), 1515. https://doi.org/10.1002/mop.31183
Chicago Style (17th ed.) CitationLee, Ho‐Chang, Sheng‐Lyang Jang, and Ji‐Shin Chiou. "An Injection‐locked Power Oscillator in 0.35 μm SiGe BiCMOS Process for Power Amplifier Driver." Microwave & Optical Technology Letters 60, no. 6 (2018): 1515. https://doi.org/10.1002/mop.31183.
MLA (9th ed.) CitationLee, Ho‐Chang, et al. "An Injection‐locked Power Oscillator in 0.35 μm SiGe BiCMOS Process for Power Amplifier Driver." Microwave & Optical Technology Letters, vol. 60, no. 6, 2018, p. 1515, https://doi.org/10.1002/mop.31183.