An injection‐locked power oscillator in 0.35 μm SiGe BiCMOS process for power amplifier driver.
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| Title: | An injection‐locked power oscillator in 0.35 μm SiGe BiCMOS process for power amplifier driver. |
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| Authors: | Lee, Ho‐Chang1, Jang, Sheng‐Lyang1 sljjj@mail.ntust.edu.tw, Chiou, Ji‐Shin1 |
| Source: | Microwave & Optical Technology Letters. Jun2018, Vol. 60 Issue 6, p1515-1519. 1111p. 2 Diagrams, 8 Graphs. |
| Subjects: | Injection locked oscillators, Complementary metal oxide semiconductors, Power amplifiers, Microfabrication, Electric potential |
| Abstract: | Abstract: In this article, we present an injection‐locked power amplifier (ILPA) suitable for 7‐GHz applications. The ILPA uses cascode SiGe HBT amplifier and was fabricated in the 0.35 μm 3P3M BiCMOS process for high supply voltage operation. The free‐running oscillation of the ILPA is around 7 GHz. The locking range is 2.4 GHz from 6.8 to 9.2 GHz. The output power from the buffer is 5.07 dBm at the ILFP‐core supply 3 V and it increases with the ILFP‐core supply voltage. [ABSTRACT FROM AUTHOR] |
| Copyright of Microwave & Optical Technology Letters is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 129280629 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: An injection‐locked power oscillator in 0.35 μm SiGe BiCMOS process for power amplifier driver. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Lee%2C+Ho‐Chang%22">Lee, Ho‐Chang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Jang%2C+Sheng‐Lyang%22">Jang, Sheng‐Lyang</searchLink><relatesTo>1</relatesTo><i> sljjj@mail.ntust.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Chiou%2C+Ji‐Shin%22">Chiou, Ji‐Shin</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Microwave+%26+Optical+Technology+Letters%22">Microwave & Optical Technology Letters</searchLink>. Jun2018, Vol. 60 Issue 6, p1515-1519. 1111p. 2 Diagrams, 8 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Injection+locked+oscillators%22">Injection locked oscillators</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Power+amplifiers%22">Power amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Microfabrication%22">Microfabrication</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+potential%22">Electric potential</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: In this article, we present an injection‐locked power amplifier (ILPA) suitable for 7‐GHz applications. The ILPA uses cascode SiGe HBT amplifier and was fabricated in the 0.35 μm 3P3M BiCMOS process for high supply voltage operation. The free‐running oscillation of the ILPA is around 7 GHz. The locking range is 2.4 GHz from 6.8 to 9.2 GHz. The output power from the buffer is 5.07 dBm at the ILFP‐core supply 3 V and it increases with the ILFP‐core supply voltage. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Microwave & Optical Technology Letters is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/mop.31183 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 1111 StartPage: 1515 Subjects: – SubjectFull: Injection locked oscillators Type: general – SubjectFull: Complementary metal oxide semiconductors Type: general – SubjectFull: Power amplifiers Type: general – SubjectFull: Microfabrication Type: general – SubjectFull: Electric potential Type: general Titles: – TitleFull: An injection‐locked power oscillator in 0.35 μm SiGe BiCMOS process for power amplifier driver. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Lee, Ho‐Chang – PersonEntity: Name: NameFull: Jang, Sheng‐Lyang – PersonEntity: Name: NameFull: Chiou, Ji‐Shin IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: Jun2018 Type: published Y: 2018 Identifiers: – Type: issn-print Value: 08952477 Numbering: – Type: volume Value: 60 – Type: issue Value: 6 Titles: – TitleFull: Microwave & Optical Technology Letters Type: main |
| ResultId | 1 |
