Evaluation of Thick-Film Materials for High-Temperature Packaging.
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| Title: | Evaluation of Thick-Film Materials for High-Temperature Packaging. |
|---|---|
| Authors: | Zhou, Zhangming1, Cui, Jinzi1, Yu, Fang2, Johnson, R. Wayne3, Hamilton, Michael C.1 |
| Source: | IEEE Transactions on Components, Packaging & Manufacturing Technology. May2018, Vol. 8 Issue 5, p773-783. 11p. |
| Subjects: | Thick-film circuits, Electronics packaging, Stray currents, Reliability of electronics, Packaging materials |
| Abstract: | High-temperature electronics are required for applications such as automotive, down-hole drilling for oil and geothermal energy, aircraft, and space exploration. SiC and GaN devices are capable of operating in these high-temperature environments and challenging the packaging materials and technology to be compatible with these environments. Thick-film materials and technology have the potential of building reliable interconnections at high temperatures. This paper investigated the electrical reliability of two thick-film conductors (PtPdAu, Au) and two dielectrics at 300 °C. Test vehicles were fabricated with thick-film materials as capacitor and interdigitated finger test structures. For the test vehicles with PtPdAu thick-film, the leakage current of the capacitor structures with thin multilayer dielectrics increased in a short time during 300 °C aging with a 100-V bias, while the leakage current of capacitor structures with thick dielectrics had only a slight increase or remained constant during 300 °C aging with bias. Cross-sectional scanning electron microscopy and energy dispersive spectroscopy analysis showed that bismuth (Bi) in the PtPdAu paste diffused into the dielectrics from both the top and bottom conductors during the high-temperature firing steps in fabrication. If the Bi was continuous through the thin dielectric, the leakage current increased during aging with bias. The leakage current of the Au conductor in capacitor and interdigitated finger structures (both thick and thin dielectrics) did not increase with biased aging in high temperature. The Au conductor did not contain Bi. [ABSTRACT FROM PUBLISHER] |
| Copyright of IEEE Transactions on Components, Packaging & Manufacturing Technology is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 129614827 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Evaluation of Thick-Film Materials for High-Temperature Packaging. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Zhou%2C+Zhangming%22">Zhou, Zhangming</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Cui%2C+Jinzi%22">Cui, Jinzi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Yu%2C+Fang%22">Yu, Fang</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Johnson%2C+R%2E+Wayne%22">Johnson, R. Wayne</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Hamilton%2C+Michael+C%2E%22">Hamilton, Michael C.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Components%2C+Packaging+%26+Manufacturing+Technology%22">IEEE Transactions on Components, Packaging & Manufacturing Technology</searchLink>. May2018, Vol. 8 Issue 5, p773-783. 11p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Thick-film+circuits%22">Thick-film circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Electronics+packaging%22">Electronics packaging</searchLink><br /><searchLink fieldCode="DE" term="%22Stray+currents%22">Stray currents</searchLink><br /><searchLink fieldCode="DE" term="%22Reliability+of+electronics%22">Reliability of electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Packaging+materials%22">Packaging materials</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: High-temperature electronics are required for applications such as automotive, down-hole drilling for oil and geothermal energy, aircraft, and space exploration. SiC and GaN devices are capable of operating in these high-temperature environments and challenging the packaging materials and technology to be compatible with these environments. Thick-film materials and technology have the potential of building reliable interconnections at high temperatures. This paper investigated the electrical reliability of two thick-film conductors (PtPdAu, Au) and two dielectrics at 300 °C. Test vehicles were fabricated with thick-film materials as capacitor and interdigitated finger test structures. For the test vehicles with PtPdAu thick-film, the leakage current of the capacitor structures with thin multilayer dielectrics increased in a short time during 300 °C aging with a 100-V bias, while the leakage current of capacitor structures with thick dielectrics had only a slight increase or remained constant during 300 °C aging with bias. Cross-sectional scanning electron microscopy and energy dispersive spectroscopy analysis showed that bismuth (Bi) in the PtPdAu paste diffused into the dielectrics from both the top and bottom conductors during the high-temperature firing steps in fabrication. If the Bi was continuous through the thin dielectric, the leakage current increased during aging with bias. The leakage current of the Au conductor in capacitor and interdigitated finger structures (both thick and thin dielectrics) did not increase with biased aging in high temperature. The Au conductor did not contain Bi. [ABSTRACT FROM PUBLISHER] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IEEE Transactions on Components, Packaging & Manufacturing Technology is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/TCPMT.2018.2814206 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 11 StartPage: 773 Subjects: – SubjectFull: Thick-film circuits Type: general – SubjectFull: Electronics packaging Type: general – SubjectFull: Stray currents Type: general – SubjectFull: Reliability of electronics Type: general – SubjectFull: Packaging materials Type: general Titles: – TitleFull: Evaluation of Thick-Film Materials for High-Temperature Packaging. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Zhou, Zhangming – PersonEntity: Name: NameFull: Cui, Jinzi – PersonEntity: Name: NameFull: Yu, Fang – PersonEntity: Name: NameFull: Johnson, R. Wayne – PersonEntity: Name: NameFull: Hamilton, Michael C. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May2018 Type: published Y: 2018 Identifiers: – Type: issn-print Value: 21563950 Numbering: – Type: volume Value: 8 – Type: issue Value: 5 Titles: – TitleFull: IEEE Transactions on Components, Packaging & Manufacturing Technology Type: main |
| ResultId | 1 |
