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Ultra-Low voltage-power DTMOS based full-wave rectifier.

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Title: Ultra-Low voltage-power DTMOS based full-wave rectifier.
Authors: Babacan, Yunus1 ybabacan@erzincan.edu.tr
Source: AEU: International Journal of Electronics & Communications. Jul2018, Vol. 91, p18-23. 6p.
Subjects: Metal oxide semiconductor field-effect transistors, Full-wave rectifiers, Low voltage systems, Electric circuits, Complementary metal oxide semiconductors
Abstract: In this paper, dynamic threshold MOS (DTMOS) transistor based full-wave rectifier with ultra-low power consumption is presented. The proposed circuit composed of only four NMOS and seven DTMOS transistors when many rectifier circuits consist of passive circuit components such as diodes, resistors and active circuit elements. The layout occupies an active area of 24.6 µm × 65.01 µm and post-layout simulation results performed using Cadence Environment with 0.18 µm TSMC CMOS technology parameters. The rectifier circuit with ±0.2 V DC supply voltages can be operated up to approximately 500 MHz and consumes only 2.83 nW thanks to the DTMOS transistors. [ABSTRACT FROM AUTHOR]
Copyright of AEU: International Journal of Electronics & Communications is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 129713965
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Ultra-Low voltage-power DTMOS based full-wave rectifier.
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  Data: <searchLink fieldCode="AR" term="%22Babacan%2C+Yunus%22">Babacan, Yunus</searchLink><relatesTo>1</relatesTo><i> ybabacan@erzincan.edu.tr</i>
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  Data: <searchLink fieldCode="JN" term="%22AEU%3A+International+Journal+of+Electronics+%26+Communications%22">AEU: International Journal of Electronics & Communications</searchLink>. Jul2018, Vol. 91, p18-23. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Metal+oxide+semiconductor+field-effect+transistors%22">Metal oxide semiconductor field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Full-wave+rectifiers%22">Full-wave rectifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Low+voltage+systems%22">Low voltage systems</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+circuits%22">Electric circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this paper, dynamic threshold MOS (DTMOS) transistor based full-wave rectifier with ultra-low power consumption is presented. The proposed circuit composed of only four NMOS and seven DTMOS transistors when many rectifier circuits consist of passive circuit components such as diodes, resistors and active circuit elements. The layout occupies an active area of 24.6 µm × 65.01 µm and post-layout simulation results performed using Cadence Environment with 0.18 µm TSMC CMOS technology parameters. The rectifier circuit with ±0.2 V DC supply voltages can be operated up to approximately 500 MHz and consumes only 2.83 nW thanks to the DTMOS transistors. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of AEU: International Journal of Electronics & Communications is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.aeue.2018.04.023
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      – Code: eng
        Text: English
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        PageCount: 6
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    Subjects:
      – SubjectFull: Metal oxide semiconductor field-effect transistors
        Type: general
      – SubjectFull: Full-wave rectifiers
        Type: general
      – SubjectFull: Low voltage systems
        Type: general
      – SubjectFull: Electric circuits
        Type: general
      – SubjectFull: Complementary metal oxide semiconductors
        Type: general
    Titles:
      – TitleFull: Ultra-Low voltage-power DTMOS based full-wave rectifier.
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            NameFull: Babacan, Yunus
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              M: 07
              Text: Jul2018
              Type: published
              Y: 2018
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              Value: 91
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            – TitleFull: AEU: International Journal of Electronics & Communications
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