Photonic band edge assisted spontaneous emission enhancement from all Er3+ 1-D photonic band gap structure.

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Title: Photonic band edge assisted spontaneous emission enhancement from all Er3+ 1-D photonic band gap structure.
Authors: Chiasera, A.1 alessandro.chiasera@ifn.cnr.it, Meroni, C.1,2, Varas, S.1, Valligatla, S.3, Scotognella, F.4,5, Boucher, Y.G.6, Lukowiak, A.7, Zur, L.1,8, Righini, G.C.8,9, Ferrari, M.1,8
Source: Optical Materials. Jun2018, Vol. 80, p106-109. 4p.
Subjects: Erbium, Photonic band gap structures, Sputtering (Physics), Photoluminescence, Scanning electron microscopy
Abstract: All Er 3+ doped dielectric 1-D Photonic Band Gap Structure was fabricated by rf-sputtering technique. The structure was constituted by of twenty pairs of SiO 2/ TiO 2 alternated layers doped with Er 3+ ions. The scanning electron microscopy was used to check the morphology of the structure. Transmission measurements put in evidence the stop band in the range 1500 nm–1950 nm. The photoluminescence measurements were obtained by optically exciting the sample and detecting the emitted light in the 1.5 μm region at different detection angles. Luminescence spectra and luminescence decay curves put in evidence that the presence of the stop band modify the emission features of the Er 3+ ions. [ABSTRACT FROM AUTHOR]
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  Label: Title
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  Data: Photonic band edge assisted spontaneous emission enhancement from all Er3+ 1-D photonic band gap structure.
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  Data: <searchLink fieldCode="AR" term="%22Chiasera%2C+A%2E%22">Chiasera, A.</searchLink><relatesTo>1</relatesTo><i> alessandro.chiasera@ifn.cnr.it</i><br /><searchLink fieldCode="AR" term="%22Meroni%2C+C%2E%22">Meroni, C.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Varas%2C+S%2E%22">Varas, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Valligatla%2C+S%2E%22">Valligatla, S.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Scotognella%2C+F%2E%22">Scotognella, F.</searchLink><relatesTo>4,5</relatesTo><br /><searchLink fieldCode="AR" term="%22Boucher%2C+Y%2EG%2E%22">Boucher, Y.G.</searchLink><relatesTo>6</relatesTo><br /><searchLink fieldCode="AR" term="%22Lukowiak%2C+A%2E%22">Lukowiak, A.</searchLink><relatesTo>7</relatesTo><br /><searchLink fieldCode="AR" term="%22Zur%2C+L%2E%22">Zur, L.</searchLink><relatesTo>1,8</relatesTo><br /><searchLink fieldCode="AR" term="%22Righini%2C+G%2EC%2E%22">Righini, G.C.</searchLink><relatesTo>8,9</relatesTo><br /><searchLink fieldCode="AR" term="%22Ferrari%2C+M%2E%22">Ferrari, M.</searchLink><relatesTo>1,8</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Optical+Materials%22">Optical Materials</searchLink>. Jun2018, Vol. 80, p106-109. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Erbium%22">Erbium</searchLink><br /><searchLink fieldCode="DE" term="%22Photonic+band+gap+structures%22">Photonic band gap structures</searchLink><br /><searchLink fieldCode="DE" term="%22Sputtering+%28Physics%29%22">Sputtering (Physics)</searchLink><br /><searchLink fieldCode="DE" term="%22Photoluminescence%22">Photoluminescence</searchLink><br /><searchLink fieldCode="DE" term="%22Scanning+electron+microscopy%22">Scanning electron microscopy</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: All Er 3+ doped dielectric 1-D Photonic Band Gap Structure was fabricated by rf-sputtering technique. The structure was constituted by of twenty pairs of SiO 2/ TiO 2 alternated layers doped with Er 3+ ions. The scanning electron microscopy was used to check the morphology of the structure. Transmission measurements put in evidence the stop band in the range 1500 nm–1950 nm. The photoluminescence measurements were obtained by optically exciting the sample and detecting the emitted light in the 1.5 μm region at different detection angles. Luminescence spectra and luminescence decay curves put in evidence that the presence of the stop band modify the emission features of the Er 3+ ions. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Optical Materials is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.optmat.2018.04.034
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 106
    Subjects:
      – SubjectFull: Erbium
        Type: general
      – SubjectFull: Photonic band gap structures
        Type: general
      – SubjectFull: Sputtering (Physics)
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      – SubjectFull: Photoluminescence
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      – SubjectFull: Scanning electron microscopy
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      – TitleFull: Photonic band edge assisted spontaneous emission enhancement from all Er3+ 1-D photonic band gap structure.
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              M: 06
              Text: Jun2018
              Type: published
              Y: 2018
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