APA (7th ed.) Citation

Hou, S., Zhuang, X., Yang, Z., & Yu, J. (2018). Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors. Nanomaterials (2079-4991), 8(4), 203. https://doi.org/10.3390/nano8040203

Chicago Style (17th ed.) Citation

Hou, Sihui, Xinming Zhuang, Zuchong Yang, and Junsheng Yu. "Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors." Nanomaterials (2079-4991) 8, no. 4 (2018): 203. https://doi.org/10.3390/nano8040203.

MLA (9th ed.) Citation

Hou, Sihui, et al. "Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors." Nanomaterials (2079-4991), vol. 8, no. 4, 2018, p. 203, https://doi.org/10.3390/nano8040203.