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Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors.

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Title: Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors.
Authors: Hou, Sihui1, Zhuang, Xinming1, Yang, Zuchong1, Yu, Junsheng1
Source: Nanomaterials (2079-4991). Apr2018, Vol. 8 Issue 4, p203. 1p.
Subjects: Thin film transistors, Annealing of semiconductors, Nitrogen dioxide
Abstract: Nitrogen dioxide (NO2) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. The NO2 responsivity of OTFTs to 15 ppm of NO2 is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO2, while showing a preferential response to NO2 compared with SO2, NH3, CO, and H2S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) films were characterized by atomic force microscopy (AFM) in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO2 gas sensing performance. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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An: 129822624
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  Label: Title
  Group: Ti
  Data: Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors.
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  Data: <searchLink fieldCode="AR" term="%22Hou%2C+Sihui%22">Hou, Sihui</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zhuang%2C+Xinming%22">Zhuang, Xinming</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Yang%2C+Zuchong%22">Yang, Zuchong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Yu%2C+Junsheng%22">Yu, Junsheng</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Apr2018, Vol. 8 Issue 4, p203. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Thin+film+transistors%22">Thin film transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Annealing+of+semiconductors%22">Annealing of semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Nitrogen+dioxide%22">Nitrogen dioxide</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Nitrogen dioxide (NO2) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. The NO2 responsivity of OTFTs to 15 ppm of NO2 is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO2, while showing a preferential response to NO2 compared with SO2, NH3, CO, and H2S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) films were characterized by atomic force microscopy (AFM) in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO2 gas sensing performance. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano8040203
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      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: 203
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      – SubjectFull: Thin film transistors
        Type: general
      – SubjectFull: Annealing of semiconductors
        Type: general
      – SubjectFull: Nitrogen dioxide
        Type: general
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      – TitleFull: Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors.
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            NameFull: Hou, Sihui
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            NameFull: Zhuang, Xinming
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              M: 04
              Text: Apr2018
              Type: published
              Y: 2018
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