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Phonon widths versus pressure.

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Title: Phonon widths versus pressure.
Authors: Cardona, Manuel1 (AUTHOR) m.cardona@fkf.mpg.de
Source: High Pressure Research. Mar2004, Vol. 24 Issue 1, p17-23. 7p.
Subjects: Besson, Jean Michel, Scientists, Phonon scattering, Semiconductors, Neutron scattering, High pressure (Science)
Abstract: In the course of a few years before his untimely death, Jean Michel Besson and his group performed the most comprehensive and detailed studies of the phonon dispersion relations of semiconductors on pressure using inelastic neutron scattering (INS). Because of the intrinsically poor resolution of this technique, parallel studies of phonon line widths are well-nigh impossible. Such studies would be of considerable interest for revealing ubiquitous anomalies in the phonon self-energies, but so far they have been confined to k-points near the center of the Brillouin zone, as required by laser Raman spectroscopy. Some interesting results obtained in this manner are presented. The possibility of simulating the effects of high pressure by changing the isotopic composition of the material will also be touched upon. It is hoped that recent developments and activity concerning the technique of Neutron Spin Echo spectroscopy will open new possibilities for using Besson's cells for the determination of the pressure dependence of phonon line widths. [ABSTRACT FROM AUTHOR]
Copyright of High Pressure Research is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 13073114
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Phonon widths versus pressure.
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  Data: <searchLink fieldCode="JN" term="%22High+Pressure+Research%22">High Pressure Research</searchLink>. Mar2004, Vol. 24 Issue 1, p17-23. 7p.
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  Data: <searchLink fieldCode="DE" term="%22Besson%2C+Jean+Michel%22">Besson, Jean Michel</searchLink><br /><searchLink fieldCode="DE" term="%22Scientists%22">Scientists</searchLink><br /><searchLink fieldCode="DE" term="%22Phonon+scattering%22">Phonon scattering</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Neutron+scattering%22">Neutron scattering</searchLink><br /><searchLink fieldCode="DE" term="%22High+pressure+%28Science%29%22">High pressure (Science)</searchLink>
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  Label: Abstract
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  Data: In the course of a few years before his untimely death, Jean Michel Besson and his group performed the most comprehensive and detailed studies of the phonon dispersion relations of semiconductors on pressure using inelastic neutron scattering (INS). Because of the intrinsically poor resolution of this technique, parallel studies of phonon line widths are well-nigh impossible. Such studies would be of considerable interest for revealing ubiquitous anomalies in the phonon self-energies, but so far they have been confined to k-points near the center of the Brillouin zone, as required by laser Raman spectroscopy. Some interesting results obtained in this manner are presented. The possibility of simulating the effects of high pressure by changing the isotopic composition of the material will also be touched upon. It is hoped that recent developments and activity concerning the technique of Neutron Spin Echo spectroscopy will open new possibilities for using Besson's cells for the determination of the pressure dependence of phonon line widths. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of High Pressure Research is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1080/08957950310001635819
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      – Code: eng
        Text: English
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        PageCount: 7
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      – SubjectFull: Besson, Jean Michel
        Type: general
      – SubjectFull: Scientists
        Type: general
      – SubjectFull: Phonon scattering
        Type: general
      – SubjectFull: Semiconductors
        Type: general
      – SubjectFull: Neutron scattering
        Type: general
      – SubjectFull: High pressure (Science)
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      – TitleFull: Phonon widths versus pressure.
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              Text: Mar2004
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