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3-D Wire Bondless Switching Cell Using Flip-Chip-Bonded Silicon Carbide Power Devices.

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Title: 3-D Wire Bondless Switching Cell Using Flip-Chip-Bonded Silicon Carbide Power Devices.
Authors: Seal, Sayan, Glover, Michael D., Mantooth, H. Alan
Source: IEEE Transactions on Power Electronics. Oct2018, Vol. 33 Issue 10, p8553-8564. 12p.
Subjects: Chip scale packaging, Electronics packaging, Wide gap semiconductors, Electric properties, Silicon carbide, Three-dimensional display systems
Abstract: This paper presents a three-dimensional (3-D) wire bondless power module using silicon carbide (SiC) power devices. Commercially available SiC power devices are designed for wire bonding. Wire bonds have an inherent parasitic inductance that limits high-frequency switching. This results in an underutilization of the full potential of SiC power devices, which have very low switching losses at high frequencies. Wire-bonded power modules run into a performance ceiling when it comes to ultrafast switching. This paper strives to provide a solution to this issue, which involves reconfiguring a commercially available bare die SiC power device into a flip-chip-capable device. A wire bondless SiC Schottky diode package was demonstrated and its performance was contrasted with a conventional wire-bonded package. A 24% reduction in the ON-state resistance was observed in the wire bondless package. As a next step, wire bondless SiC MOSFET packages were developed and tested in a half-bridge configuration in a highly integrated 3-D arrangement. This approach departs from the conventional concept of a power module—demonstrating a direct-bonded-copper-less and baseplate-less half-bridge switching cell. Double-pulse tests conducted on the cell showed >3× reduction in the parasitic inductance of the 3-D cell as compared with a conventional wire-bonded module. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Power Electronics is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
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  Data: 3-D Wire Bondless Switching Cell Using Flip-Chip-Bonded Silicon Carbide Power Devices.
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  Data: <searchLink fieldCode="AR" term="%22Seal%2C+Sayan%22">Seal, Sayan</searchLink><br /><searchLink fieldCode="AR" term="%22Glover%2C+Michael+D%2E%22">Glover, Michael D.</searchLink><br /><searchLink fieldCode="AR" term="%22Mantooth%2C+H%2E+Alan%22">Mantooth, H. Alan</searchLink>
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  Data: <searchLink fieldCode="DE" term="%22Chip+scale+packaging%22">Chip scale packaging</searchLink><br /><searchLink fieldCode="DE" term="%22Electronics+packaging%22">Electronics packaging</searchLink><br /><searchLink fieldCode="DE" term="%22Wide+gap+semiconductors%22">Wide gap semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+properties%22">Electric properties</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+carbide%22">Silicon carbide</searchLink><br /><searchLink fieldCode="DE" term="%22Three-dimensional+display+systems%22">Three-dimensional display systems</searchLink>
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  Data: This paper presents a three-dimensional (3-D) wire bondless power module using silicon carbide (SiC) power devices. Commercially available SiC power devices are designed for wire bonding. Wire bonds have an inherent parasitic inductance that limits high-frequency switching. This results in an underutilization of the full potential of SiC power devices, which have very low switching losses at high frequencies. Wire-bonded power modules run into a performance ceiling when it comes to ultrafast switching. This paper strives to provide a solution to this issue, which involves reconfiguring a commercially available bare die SiC power device into a flip-chip-capable device. A wire bondless SiC Schottky diode package was demonstrated and its performance was contrasted with a conventional wire-bonded package. A 24% reduction in the ON-state resistance was observed in the wire bondless package. As a next step, wire bondless SiC MOSFET packages were developed and tested in a half-bridge configuration in a highly integrated 3-D arrangement. This approach departs from the conventional concept of a power module—demonstrating a direct-bonded-copper-less and baseplate-less half-bridge switching cell. Double-pulse tests conducted on the cell showed >3× reduction in the parasitic inductance of the 3-D cell as compared with a conventional wire-bonded module. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of IEEE Transactions on Power Electronics is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/TPEL.2017.2782226
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      – Code: eng
        Text: English
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        PageCount: 12
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      – SubjectFull: Chip scale packaging
        Type: general
      – SubjectFull: Electronics packaging
        Type: general
      – SubjectFull: Wide gap semiconductors
        Type: general
      – SubjectFull: Electric properties
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      – SubjectFull: Silicon carbide
        Type: general
      – SubjectFull: Three-dimensional display systems
        Type: general
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      – TitleFull: 3-D Wire Bondless Switching Cell Using Flip-Chip-Bonded Silicon Carbide Power Devices.
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              Text: Oct2018
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