Modeling and analysis of single-event transient sensitivity of a 65 nm clock tree.
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| Title: | Modeling and analysis of single-event transient sensitivity of a 65 nm clock tree. |
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| Authors: | Chen, Li1, Chen, Mo1, Wang, Haibin1, Liu, Rui1, Chen, Qingyu1, Li, Yuanqing1,2, Krstic, Milos2,3, Nofal, Issam4, Shi, Shuting5, Guo, Gang5, Baeg, Sang H.6, Wen, Shi-Jie7, Wong, Richard7 |
| Source: | Microelectronics Reliability. Aug2018, Vol. 87, p24-32. 9p. |
| Subjects: | Soft errors, Clock distribution networks, Electric inverters, Integrated circuits, Simulation methods & models |
| Abstract: | The soft error rate (SER) due to heavy-ion irradiation of a clock tree is investigated in this paper. A method for clock tree SER prediction is developed, which employs a dedicated soft error analysis tool to characterize the single-event transient (SET) sensitivities of clock inverters and other commercial tools to calculate the SER through fault-injection simulations. A test circuit including a flip-flop chain and clock tree in a 65 nm CMOS technology is developed through the automatic ASIC design flow. This circuit is analyzed with the developed method to calculate its clock tree SER. In addition, this circuit is implemented in a 65 nm test chip and irradiated by heavy ions to measure its SER resulting from the SETs in the clock tree. The experimental and calculation results of this case study present good correlation, which verifies the effectiveness of the developed method. [ABSTRACT FROM AUTHOR] |
| Copyright of Microelectronics Reliability is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 130952112 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Modeling and analysis of single-event transient sensitivity of a 65 nm clock tree. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Chen%2C+Li%22">Chen, Li</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chen%2C+Mo%22">Chen, Mo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+Haibin%22">Wang, Haibin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Liu%2C+Rui%22">Liu, Rui</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chen%2C+Qingyu%22">Chen, Qingyu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Li%2C+Yuanqing%22">Li, Yuanqing</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Krstic%2C+Milos%22">Krstic, Milos</searchLink><relatesTo>2,3</relatesTo><br /><searchLink fieldCode="AR" term="%22Nofal%2C+Issam%22">Nofal, Issam</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Shi%2C+Shuting%22">Shi, Shuting</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AR" term="%22Guo%2C+Gang%22">Guo, Gang</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AR" term="%22Baeg%2C+Sang+H%2E%22">Baeg, Sang H.</searchLink><relatesTo>6</relatesTo><br /><searchLink fieldCode="AR" term="%22Wen%2C+Shi-Jie%22">Wen, Shi-Jie</searchLink><relatesTo>7</relatesTo><br /><searchLink fieldCode="AR" term="%22Wong%2C+Richard%22">Wong, Richard</searchLink><relatesTo>7</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Microelectronics+Reliability%22">Microelectronics Reliability</searchLink>. Aug2018, Vol. 87, p24-32. 9p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Soft+errors%22">Soft errors</searchLink><br /><searchLink fieldCode="DE" term="%22Clock+distribution+networks%22">Clock distribution networks</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+inverters%22">Electric inverters</searchLink><br /><searchLink fieldCode="DE" term="%22Integrated+circuits%22">Integrated circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Simulation+methods+%26+models%22">Simulation methods & models</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The soft error rate (SER) due to heavy-ion irradiation of a clock tree is investigated in this paper. A method for clock tree SER prediction is developed, which employs a dedicated soft error analysis tool to characterize the single-event transient (SET) sensitivities of clock inverters and other commercial tools to calculate the SER through fault-injection simulations. A test circuit including a flip-flop chain and clock tree in a 65 nm CMOS technology is developed through the automatic ASIC design flow. This circuit is analyzed with the developed method to calculate its clock tree SER. In addition, this circuit is implemented in a 65 nm test chip and irradiated by heavy ions to measure its SER resulting from the SETs in the clock tree. The experimental and calculation results of this case study present good correlation, which verifies the effectiveness of the developed method. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Microelectronics Reliability is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.microrel.2018.05.016 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 24 Subjects: – SubjectFull: Soft errors Type: general – SubjectFull: Clock distribution networks Type: general – SubjectFull: Electric inverters Type: general – SubjectFull: Integrated circuits Type: general – SubjectFull: Simulation methods & models Type: general Titles: – TitleFull: Modeling and analysis of single-event transient sensitivity of a 65 nm clock tree. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chen, Li – PersonEntity: Name: NameFull: Chen, Mo – PersonEntity: Name: NameFull: Wang, Haibin – PersonEntity: Name: NameFull: Liu, Rui – PersonEntity: Name: NameFull: Chen, Qingyu – PersonEntity: Name: NameFull: Li, Yuanqing – PersonEntity: Name: NameFull: Krstic, Milos – PersonEntity: Name: NameFull: Nofal, Issam – PersonEntity: Name: NameFull: Shi, Shuting – PersonEntity: Name: NameFull: Guo, Gang – PersonEntity: Name: NameFull: Baeg, Sang H. – PersonEntity: Name: NameFull: Wen, Shi-Jie – PersonEntity: Name: NameFull: Wong, Richard IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Text: Aug2018 Type: published Y: 2018 Identifiers: – Type: issn-print Value: 00262714 Numbering: – Type: volume Value: 87 Titles: – TitleFull: Microelectronics Reliability Type: main |
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