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Ultra-low resistivity aluminum doped ZnO thin films on flexible substrates using sol-gel solution deposition.

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Title:	Ultra-low resistivity aluminum doped ZnO thin films on flexible substrates using sol-gel solution deposition.
Authors:	Kraya, R.¹ rkraya@jhu.edu, Baskar, J.¹, Arceo, A.¹, Katz, H.E.¹, Thakor, N.¹
Source:	Thin Solid Films. Oct2018, Vol. 664, p41-45. 5p.
Subjects:	Aluminum, Zinc oxide films, Electrical resistivity, Doping agents (Chemistry), Substrates (Materials science), Sol-gel processes
Abstract:	Abstract The effect of a combination of low temperature heat treatments, microwave annealing, and low temperature vacuum annealing on the resistivity of 1% Al-doped ZnO thin films (AZO) deposited on both flexible polyimide films and rigid silicon substrates was investigated. The sol-gel deposition technique was used to deposit successive layers with a 0.5-hour heat treatment application prior to the deposition of additional layers. Following the final layer deposition and 0.5-hour treatment, the samples either underwent a final thermal annealing or microwave plus thermal annealing. Finally, a post-treatment annealing in a high vacuum chamber at 300 °C was administered. The films exhibited ultra-low resistivity of 14 Ω-cm on the polyimide with good adhesion qualities and a 0.08 Ω-cm resistivity on silicon wafers. A hexagonal wurtzite structure with the (002) c-axis orientation in the film growth direction was evident along with a dense microstructure of homogeneously distributed grains. Highlights • Low temperature growth of n-type ZnO thin films on polyimide. • The method involves a combination of thermal, microwave, and vacuum annealing. • Thermal annealing improved structure. • Microwave and vacuum annealing improved the conductance. [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

Description
Abstract:	Abstract The effect of a combination of low temperature heat treatments, microwave annealing, and low temperature vacuum annealing on the resistivity of 1% Al-doped ZnO thin films (AZO) deposited on both flexible polyimide films and rigid silicon substrates was investigated. The sol-gel deposition technique was used to deposit successive layers with a 0.5-hour heat treatment application prior to the deposition of additional layers. Following the final layer deposition and 0.5-hour treatment, the samples either underwent a final thermal annealing or microwave plus thermal annealing. Finally, a post-treatment annealing in a high vacuum chamber at 300 °C was administered. The films exhibited ultra-low resistivity of 14 Ω-cm on the polyimide with good adhesion qualities and a 0.08 Ω-cm resistivity on silicon wafers. A hexagonal wurtzite structure with the (002) c-axis orientation in the film growth direction was evident along with a dense microstructure of homogeneously distributed grains. Highlights • Low temperature growth of n-type ZnO thin films on polyimide. • The method involves a combination of thermal, microwave, and vacuum annealing. • Thermal annealing improved structure. • Microwave and vacuum annealing improved the conductance. [ABSTRACT FROM AUTHOR]
ISSN:	00406090
DOI:	10.1016/j.tsf.2018.08.019