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Ultra-low resistivity aluminum doped ZnO thin films on flexible substrates using sol-gel solution deposition.

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Title: Ultra-low resistivity aluminum doped ZnO thin films on flexible substrates using sol-gel solution deposition.
Authors: Kraya, R.1 rkraya@jhu.edu, Baskar, J.1, Arceo, A.1, Katz, H.E.1, Thakor, N.1
Source: Thin Solid Films. Oct2018, Vol. 664, p41-45. 5p.
Subjects: Aluminum, Zinc oxide films, Electrical resistivity, Doping agents (Chemistry), Substrates (Materials science), Sol-gel processes
Abstract: Abstract The effect of a combination of low temperature heat treatments, microwave annealing, and low temperature vacuum annealing on the resistivity of 1% Al-doped ZnO thin films (AZO) deposited on both flexible polyimide films and rigid silicon substrates was investigated. The sol-gel deposition technique was used to deposit successive layers with a 0.5-hour heat treatment application prior to the deposition of additional layers. Following the final layer deposition and 0.5-hour treatment, the samples either underwent a final thermal annealing or microwave plus thermal annealing. Finally, a post-treatment annealing in a high vacuum chamber at 300 °C was administered. The films exhibited ultra-low resistivity of 14 Ω-cm on the polyimide with good adhesion qualities and a 0.08 Ω-cm resistivity on silicon wafers. A hexagonal wurtzite structure with the (002) c-axis orientation in the film growth direction was evident along with a dense microstructure of homogeneously distributed grains. Highlights • Low temperature growth of n-type ZnO thin films on polyimide. • The method involves a combination of thermal, microwave, and vacuum annealing. • Thermal annealing improved structure. • Microwave and vacuum annealing improved the conductance. [ABSTRACT FROM AUTHOR]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 131788008
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Ultra-low resistivity aluminum doped ZnO thin films on flexible substrates using sol-gel solution deposition.
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  Data: <searchLink fieldCode="JN" term="%22Thin+Solid+Films%22">Thin Solid Films</searchLink>. Oct2018, Vol. 664, p41-45. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Aluminum%22">Aluminum</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide+films%22">Zinc oxide films</searchLink><br /><searchLink fieldCode="DE" term="%22Electrical+resistivity%22">Electrical resistivity</searchLink><br /><searchLink fieldCode="DE" term="%22Doping+agents+%28Chemistry%29%22">Doping agents (Chemistry)</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Sol-gel+processes%22">Sol-gel processes</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Abstract The effect of a combination of low temperature heat treatments, microwave annealing, and low temperature vacuum annealing on the resistivity of 1% Al-doped ZnO thin films (AZO) deposited on both flexible polyimide films and rigid silicon substrates was investigated. The sol-gel deposition technique was used to deposit successive layers with a 0.5-hour heat treatment application prior to the deposition of additional layers. Following the final layer deposition and 0.5-hour treatment, the samples either underwent a final thermal annealing or microwave plus thermal annealing. Finally, a post-treatment annealing in a high vacuum chamber at 300 °C was administered. The films exhibited ultra-low resistivity of 14 Ω-cm on the polyimide with good adhesion qualities and a 0.08 Ω-cm resistivity on silicon wafers. A hexagonal wurtzite structure with the (002) c-axis orientation in the film growth direction was evident along with a dense microstructure of homogeneously distributed grains. Highlights • Low temperature growth of n-type ZnO thin films on polyimide. • The method involves a combination of thermal, microwave, and vacuum annealing. • Thermal annealing improved structure. • Microwave and vacuum annealing improved the conductance. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.tsf.2018.08.019
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 41
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      – SubjectFull: Aluminum
        Type: general
      – SubjectFull: Zinc oxide films
        Type: general
      – SubjectFull: Electrical resistivity
        Type: general
      – SubjectFull: Doping agents (Chemistry)
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      – SubjectFull: Substrates (Materials science)
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      – SubjectFull: Sol-gel processes
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      – TitleFull: Ultra-low resistivity aluminum doped ZnO thin films on flexible substrates using sol-gel solution deposition.
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            NameFull: Kraya, R.
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            NameFull: Baskar, J.
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              Text: Oct2018
              Type: published
              Y: 2018
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