High quantum efficiency red-emitting K2Gd(PO4)(WO4): Sm3+ phosphor: preparation, characterization and photoluminescence properties.
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| Title: | High quantum efficiency red-emitting K |
|---|---|
| Authors: | Fan, Guodong1,2,3 fangd@sust.edu.cn, Tian, Zicun1,2, Wang, Xuejuan1,2, Tang, Shulin1,2, Chen, Youning4 |
| Source: | Journal of Materials Science: Materials in Electronics. Oct2018, Vol. 29 Issue 20, p17681-17688. 8p. |
| Subjects: | Phosphors, Luminescence, Optical materials, Electroluminescent devices, Doping agents (Chemistry), Light emitting diodes |
| Abstract: | The Sm3+-activated K2Gd(PO4)(WO4) phosphors were prepared by a high temperature solid state reaction in air atmosphere and their photoluminescence properties were investigated in detail. These phosphors manifest the intense absorption under the 404 nm and give rise to bright red luminescence at the main emission peaks of 568, 604, 649 and 708 nm, corresponding to the 4G5/2→6HJ/2 (J = 5, 7, 9, 11) transitions of Sm3+ ions, respectively. The type of energy transfer between Sm3+ ions were affirmed as among nearest-neighbor ions and the critical distance Rc of concentration quenching was calculated to be 27.23 Å. Furthermore, K2Gd0.98(PO4)(WO4):0.02Sm3+ was provided with superb color coordinate (0.5806, 0.4164) also high color purity. Temperature related photoluminescence spectra and decay curves indicated that the K2Gd0.98(PO4)(WO4):0.02Sm3+ possessed good thermal stability and quantum efficiency was determined to be 91.2%. These remarkable features revealed that the K2Gd(PO4)(WO4):Sm3+ phosphors are high-performance phosphors for applications of white light-emitting diodes. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 131860976 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: High quantum efficiency red-emitting K<subscript>2</subscript>Gd(PO<subscript>4</subscript>)(WO<subscript>4</subscript>): Sm<superscript>3+</superscript> phosphor: preparation, characterization and photoluminescence properties. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Fan%2C+Guodong%22">Fan, Guodong</searchLink><relatesTo>1,2,3</relatesTo><i> fangd@sust.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Tian%2C+Zicun%22">Tian, Zicun</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+Xuejuan%22">Wang, Xuejuan</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Tang%2C+Shulin%22">Tang, Shulin</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Chen%2C+Youning%22">Chen, Youning</searchLink><relatesTo>4</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Oct2018, Vol. 29 Issue 20, p17681-17688. 8p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Phosphors%22">Phosphors</searchLink><br /><searchLink fieldCode="DE" term="%22Luminescence%22">Luminescence</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+materials%22">Optical materials</searchLink><br /><searchLink fieldCode="DE" term="%22Electroluminescent+devices%22">Electroluminescent devices</searchLink><br /><searchLink fieldCode="DE" term="%22Doping+agents+%28Chemistry%29%22">Doping agents (Chemistry)</searchLink><br /><searchLink fieldCode="DE" term="%22Light+emitting+diodes%22">Light emitting diodes</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The Sm3+-activated K2Gd(PO4)(WO4) phosphors were prepared by a high temperature solid state reaction in air atmosphere and their photoluminescence properties were investigated in detail. These phosphors manifest the intense absorption under the 404 nm and give rise to bright red luminescence at the main emission peaks of 568, 604, 649 and 708 nm, corresponding to the 4G5/2→6HJ/2 (J = 5, 7, 9, 11) transitions of Sm3+ ions, respectively. The type of energy transfer between Sm3+ ions were affirmed as among nearest-neighbor ions and the critical distance Rc of concentration quenching was calculated to be 27.23 Å. Furthermore, K2Gd0.98(PO4)(WO4):0.02Sm3+ was provided with superb color coordinate (0.5806, 0.4164) also high color purity. Temperature related photoluminescence spectra and decay curves indicated that the K2Gd0.98(PO4)(WO4):0.02Sm3+ possessed good thermal stability and quantum efficiency was determined to be 91.2%. These remarkable features revealed that the K2Gd(PO4)(WO4):Sm3+ phosphors are high-performance phosphors for applications of white light-emitting diodes. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-018-9873-7 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 17681 Subjects: – SubjectFull: Phosphors Type: general – SubjectFull: Luminescence Type: general – SubjectFull: Optical materials Type: general – SubjectFull: Electroluminescent devices Type: general – SubjectFull: Doping agents (Chemistry) Type: general – SubjectFull: Light emitting diodes Type: general Titles: – TitleFull: High quantum efficiency red-emitting K2Gd(PO4)(WO4): Sm3+ phosphor: preparation, characterization and photoluminescence properties. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Fan, Guodong – PersonEntity: Name: NameFull: Tian, Zicun – PersonEntity: Name: NameFull: Wang, Xuejuan – PersonEntity: Name: NameFull: Tang, Shulin – PersonEntity: Name: NameFull: Chen, Youning IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 10 Text: Oct2018 Type: published Y: 2018 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 29 – Type: issue Value: 20 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
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