APA (7th ed.) Citation

Kumar, A., Gupta, A., & Rai, S. (2018). Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor. AEU: International Journal of Electronics & Communications, 95, 162. https://doi.org/10.1016/j.aeue.2018.08.023

Chicago Style (17th ed.) Citation

Kumar, Amrish, Abhinav Gupta, and Sanjeev Rai. "Reduction of Self-heating Effect Using Selective Buried Oxide (SELBOX) Charge Plasma Based Junctionless Transistor." AEU: International Journal of Electronics & Communications 95 (2018): 162. https://doi.org/10.1016/j.aeue.2018.08.023.

MLA (9th ed.) Citation

Kumar, Amrish, et al. "Reduction of Self-heating Effect Using Selective Buried Oxide (SELBOX) Charge Plasma Based Junctionless Transistor." AEU: International Journal of Electronics & Communications, vol. 95, 2018, p. 162, https://doi.org/10.1016/j.aeue.2018.08.023.