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Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor.

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Title: Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor.
Authors: Kumar, Amrish1, Gupta, Abhinav1 abhinavkit87@gmail.com, Rai, Sanjeev1 srai@mnnit.ac.in
Source: AEU: International Journal of Electronics & Communications. Oct2018, Vol. 95, p162-169. 8p.
Subjects: Threshold voltage, Electron work function, Electron plasma, Metal oxide semiconductor field-effect transistors, Silicon wafers
Abstract: Abstract A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. [ABSTRACT FROM AUTHOR]
Copyright of AEU: International Journal of Electronics & Communications is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 131884068
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Kumar%2C+Amrish%22">Kumar, Amrish</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Gupta%2C+Abhinav%22">Gupta, Abhinav</searchLink><relatesTo>1</relatesTo><i> abhinavkit87@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Rai%2C+Sanjeev%22">Rai, Sanjeev</searchLink><relatesTo>1</relatesTo><i> srai@mnnit.ac.in</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22AEU%3A+International+Journal+of+Electronics+%26+Communications%22">AEU: International Journal of Electronics & Communications</searchLink>. Oct2018, Vol. 95, p162-169. 8p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Threshold+voltage%22">Threshold voltage</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+work+function%22">Electron work function</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+plasma%22">Electron plasma</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductor+field-effect+transistors%22">Metal oxide semiconductor field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+wafers%22">Silicon wafers</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of AEU: International Journal of Electronics & Communications is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.aeue.2018.08.023
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 162
    Subjects:
      – SubjectFull: Threshold voltage
        Type: general
      – SubjectFull: Electron work function
        Type: general
      – SubjectFull: Electron plasma
        Type: general
      – SubjectFull: Metal oxide semiconductor field-effect transistors
        Type: general
      – SubjectFull: Silicon wafers
        Type: general
    Titles:
      – TitleFull: Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Kumar, Amrish
      – PersonEntity:
          Name:
            NameFull: Gupta, Abhinav
      – PersonEntity:
          Name:
            NameFull: Rai, Sanjeev
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 10
              Text: Oct2018
              Type: published
              Y: 2018
          Identifiers:
            – Type: issn-print
              Value: 14348411
          Numbering:
            – Type: volume
              Value: 95
          Titles:
            – TitleFull: AEU: International Journal of Electronics & Communications
              Type: main
ResultId 1