Bibliographic Details
| Title: |
Effect of O2 flow rate on the characteristics of ZnO thin films deposited by RF reactive magnetron sputtering. |
| Authors: |
Kamble, Sudhir S.1 sudhirsk@debel.drdo.in, Radhakrishnan, J. K.1, Krishnamoorthy, Rajavel2 |
| Source: |
Materials Technology. Sep2018, Vol. 33 Issue 11, p709-715. 7p. |
| Subjects: |
Semiconductor thin films, Magnetron sputtering, X-ray diffraction, Microstructure, Lattice constants, Field emission electron microscopy, Scanning electron microscopy, Photoluminescence |
| Abstract: |
ZnO thin films were deposited on glass substrates by radio-frequency (RF) reactive sputtering under different O2 flow rates, with constant Ar flow rate (50sccm). The dependence of O2 flow rate on structural and optical properties of deposited ZnO films were studied comprehensively. From X-ray diffraction (XRD) data, the microstructural parameters such as lattice constant, average crystallite size and stress were estimated and correlated with the morphology and optical properties of the deposited ZnO films. Field emission scanning electron microscopy (FESEM) results reveal that, the deposited ZnO thin films have spherical shaped crystallites and their size decreases with increasing O2 flow rate. The optical properties were studied by UV-Vis transmission and photoluminescence (PL) spectroscopy. The room temperature PL study shows a near band edge emission (NBE), which exhibits a blue shift from 393 nm to 378 nm with increase in O2 flow rate, and defect related emission peaks in the visible region. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |