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A K-band low-noise bipolar class-C VCO for 5G backhaul systems in 55 nm BiCMOS technology.

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Title: A K-band low-noise bipolar class-C VCO for 5G backhaul systems in 55 nm BiCMOS technology.
Authors: Lacaita, Niccolò1 niccolo.lacaita@gmail.com, Bassi, Matteo1, Mazzanti, Andrea1, Svelto, Francesco1
Source: Integration: The VLSI Journal. Sep2018, Vol. 63, p299-305. 7p.
Subjects: Low noise amplifiers, Voltage-controlled oscillators, BiCMOS digital integrated circuits, Telecommunication systems, Electronic band structure
Abstract: Abstract The development of 5G communication systems is underway. When employing 64 QAM, very low phase noise levels are required to limit EVM - i.e. less than −117 dBc/Hz at 1 MHz offset from f = 20 GHz. In this paper, the challenges of achieving such a low phase noise are discussed in detail. The choice between CMOS vs BJT devices is investigated and the impact of the base resistance intrinsic in BJT-based VCOs is addressed. BJT-based VCO shows ∼2 dB better phase noise when compared to CMOS-based VCO and low supply is employed. When higher supply is leveraged, BJT-based VCO advantage is kept while CMOS-based VCO is not able to reach the targeted tuning range due to thick-oxide devices parasitics. Emphasis is on the minimization of L/Q inductor versus quality factor ratio, to further minimize phase noise. Prototypes in a 55 nm BiCMOS technology were operated at 2.5 V supply with the largest amplitude allowed by reliability constraints. Measurements show a phase noise as low as −119 dBc/Hz at 1 MHz from a 20 GHz carrier offset with a tuning range (TR) of 19% and FoM = −187 dBc/Hz. Power consumption is 56 mW. To the best of authors' knowledge, the presented VCO shows the lowest reported phase noise among state-of-the-art BiCMOS VCOs with TR>10%. Highlights • Minimization of L/Q ratio is key to achieve very low phase noise levels. • A comparison between class-B/class-C VCOs with BJT/MOS active devices is presented. • BJTs offer several advantages over CMOS for VCO design. • Trade-off between base resistance noise and tuning-range is addressed for BJT/MOS VCOs. • A class-C BJT-based VCO is presented with record phase noise. [ABSTRACT FROM AUTHOR]
Copyright of Integration: The VLSI Journal is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 132036794
AccessLevel: 6
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PubTypeId: academicJournal
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  Data: A K-band low-noise bipolar class-C VCO for 5G backhaul systems in 55 nm BiCMOS technology.
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  Data: <searchLink fieldCode="AR" term="%22Lacaita%2C+Niccolò%22">Lacaita, Niccolò</searchLink><relatesTo>1</relatesTo><i> niccolo.lacaita@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Bassi%2C+Matteo%22">Bassi, Matteo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Mazzanti%2C+Andrea%22">Mazzanti, Andrea</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Svelto%2C+Francesco%22">Svelto, Francesco</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Integration%3A+The+VLSI+Journal%22">Integration: The VLSI Journal</searchLink>. Sep2018, Vol. 63, p299-305. 7p.
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– Name: Abstract
  Label: Abstract
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  Data: Abstract The development of 5G communication systems is underway. When employing 64 QAM, very low phase noise levels are required to limit EVM - i.e. less than −117 dBc/Hz at 1 MHz offset from f = 20 GHz. In this paper, the challenges of achieving such a low phase noise are discussed in detail. The choice between CMOS vs BJT devices is investigated and the impact of the base resistance intrinsic in BJT-based VCOs is addressed. BJT-based VCO shows ∼2 dB better phase noise when compared to CMOS-based VCO and low supply is employed. When higher supply is leveraged, BJT-based VCO advantage is kept while CMOS-based VCO is not able to reach the targeted tuning range due to thick-oxide devices parasitics. Emphasis is on the minimization of L/Q inductor versus quality factor ratio, to further minimize phase noise. Prototypes in a 55 nm BiCMOS technology were operated at 2.5 V supply with the largest amplitude allowed by reliability constraints. Measurements show a phase noise as low as −119 dBc/Hz at 1 MHz from a 20 GHz carrier offset with a tuning range (TR) of 19% and FoM = −187 dBc/Hz. Power consumption is 56 mW. To the best of authors' knowledge, the presented VCO shows the lowest reported phase noise among state-of-the-art BiCMOS VCOs with TR>10%. Highlights • Minimization of L/Q ratio is key to achieve very low phase noise levels. • A comparison between class-B/class-C VCOs with BJT/MOS active devices is presented. • BJTs offer several advantages over CMOS for VCO design. • Trade-off between base resistance noise and tuning-range is addressed for BJT/MOS VCOs. • A class-C BJT-based VCO is presented with record phase noise. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Integration: The VLSI Journal is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.vlsi.2018.04.009
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        Text: English
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        Type: general
      – SubjectFull: Voltage-controlled oscillators
        Type: general
      – SubjectFull: BiCMOS digital integrated circuits
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      – SubjectFull: Telecommunication systems
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      – SubjectFull: Electronic band structure
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      – TitleFull: A K-band low-noise bipolar class-C VCO for 5G backhaul systems in 55 nm BiCMOS technology.
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            NameFull: Lacaita, Niccolò
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            NameFull: Bassi, Matteo
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              M: 09
              Text: Sep2018
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              Y: 2018
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              Value: 63
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