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Analysis of the Channel and Contact Regions in Staggered and Drain-Offset ZnO Thin-Film Transistors With Compact Modeling.

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Title: Analysis of the Channel and Contact Regions in Staggered and Drain-Offset ZnO Thin-Film Transistors With Compact Modeling.
Authors: Ma, Alex M., Barlage, Douglas W.
Source: IEEE Transactions on Electron Devices. Aug2018, Vol. 65 Issue 8, p3277-3282. 6p.
Subjects: Zinc oxide, Thin film transistors, Ruthenium, Electrodes, Intrinsic semiconductors
Abstract: Zinc oxide thin-film transistors (TFTs) with different device geometries and source/drain (S/D) contact metallizations are investigated. To facilitate the analysis, the channel and contact regions in top-gated staggered and drain-offset TFTs employing various permutations of ruthenium (Ru) and gold (Au) bottom electrodes are quantified with a TFT device model. The staggered TFT structure employs identical geometric overlaps between the gate-and-S/D electrodes; whereas the drain-offset TFT structure replaces the gate-to-drain overlap with a geometric gap in the channel. First, the experimental TFT current–voltage (${I}$ – ${V}$) characteristics are disentangled into the intrinsic channel and contact components by the transmission line method. The contact and channel behaviors are then individually modeled using a universal transistor compact model. From evaluating the model parameters, the diverse device characteristics observed in this paper are attributed to the Au electrode’s electron doping effect altering the properties of both the TFT’s contact and channel regions. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
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  Label: Title
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  Data: Analysis of the Channel and Contact Regions in Staggered and Drain-Offset ZnO Thin-Film Transistors With Compact Modeling.
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  Data: <searchLink fieldCode="AR" term="%22Ma%2C+Alex+M%2E%22">Ma, Alex M.</searchLink><br /><searchLink fieldCode="AR" term="%22Barlage%2C+Douglas+W%2E%22">Barlage, Douglas W.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>. Aug2018, Vol. 65 Issue 8, p3277-3282. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Zinc+oxide%22">Zinc oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+film+transistors%22">Thin film transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Ruthenium%22">Ruthenium</searchLink><br /><searchLink fieldCode="DE" term="%22Electrodes%22">Electrodes</searchLink><br /><searchLink fieldCode="DE" term="%22Intrinsic+semiconductors%22">Intrinsic semiconductors</searchLink>
– Name: Abstract
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  Group: Ab
  Data: Zinc oxide thin-film transistors (TFTs) with different device geometries and source/drain (S/D) contact metallizations are investigated. To facilitate the analysis, the channel and contact regions in top-gated staggered and drain-offset TFTs employing various permutations of ruthenium (Ru) and gold (Au) bottom electrodes are quantified with a TFT device model. The staggered TFT structure employs identical geometric overlaps between the gate-and-S/D electrodes; whereas the drain-offset TFT structure replaces the gate-to-drain overlap with a geometric gap in the channel. First, the experimental TFT current–voltage (${I}$ – ${V}$) characteristics are disentangled into the intrinsic channel and contact components by the transmission line method. The contact and channel behaviors are then individually modeled using a universal transistor compact model. From evaluating the model parameters, the diverse device characteristics observed in this paper are attributed to the Au electrode’s electron doping effect altering the properties of both the TFT’s contact and channel regions. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/TED.2018.2847612
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      – Code: eng
        Text: English
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        PageCount: 6
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    Subjects:
      – SubjectFull: Zinc oxide
        Type: general
      – SubjectFull: Thin film transistors
        Type: general
      – SubjectFull: Ruthenium
        Type: general
      – SubjectFull: Electrodes
        Type: general
      – SubjectFull: Intrinsic semiconductors
        Type: general
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      – TitleFull: Analysis of the Channel and Contact Regions in Staggered and Drain-Offset ZnO Thin-Film Transistors With Compact Modeling.
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              Text: Aug2018
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