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Electrochemically copper-doped bismuth tellurium selenide thin films.

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Title: Electrochemically copper-doped bismuth tellurium selenide thin films.
Authors: Burton, Matthew R.1, Naylor, Andrew J.1, Nandhakumar, Iris S.1 iris@soton.ac.uk
Source: Electrochemistry Communications. Dec2018, Vol. 97, p56-59. 4p.
Subjects: Electrochemical analysis, Copper alloys, Doping agents (Chemistry), Bismuth selenide, Tellurium compounds, Metallic thin films
Abstract: Abstract We report the first results of a study on electrochemically doped copper bismuth tellurium selenide thin films electrodeposited from aqueous nitric acid electrolytes containing up to 2 mM of Cu(NO 3) 2. The effect of Cu(NO 3) 2 concentration on the composition, structure and thermoelectric properties of the bismuth tellurium selenide films is investigated by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and Seebeck and Hall effect measurements. A Cu(NO 3) 2 concentration of 1.5 mM is found to offer a Seebeck coefficient of up to −390 μV K−1 at room temperature, which is the highest reported to date for an electrodeposited bismuth tellurium compound. Highlights • Studies on the electrochemical fabrication of bismuth tellurium selenide are rare in the literature • First study that reports the electrochemical doping of copper into bismuth tellurium selenide thin films. • All deposits produced were n-type with a Seebeck coefficient of up to -390 μV/K • Study will open up opportunities for other researchers to explore electrochemical doping as a low cost low temperature route alternative [ABSTRACT FROM AUTHOR]
Copyright of Electrochemistry Communications is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 133216110
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: <searchLink fieldCode="AR" term="%22Burton%2C+Matthew+R%2E%22">Burton, Matthew R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Naylor%2C+Andrew+J%2E%22">Naylor, Andrew J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Nandhakumar%2C+Iris+S%2E%22">Nandhakumar, Iris S.</searchLink><relatesTo>1</relatesTo><i> iris@soton.ac.uk</i>
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  Data: <searchLink fieldCode="JN" term="%22Electrochemistry+Communications%22">Electrochemistry Communications</searchLink>. Dec2018, Vol. 97, p56-59. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Electrochemical+analysis%22">Electrochemical analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Copper+alloys%22">Copper alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Doping+agents+%28Chemistry%29%22">Doping agents (Chemistry)</searchLink><br /><searchLink fieldCode="DE" term="%22Bismuth+selenide%22">Bismuth selenide</searchLink><br /><searchLink fieldCode="DE" term="%22Tellurium+compounds%22">Tellurium compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Metallic+thin+films%22">Metallic thin films</searchLink>
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  Label: Abstract
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  Data: Abstract We report the first results of a study on electrochemically doped copper bismuth tellurium selenide thin films electrodeposited from aqueous nitric acid electrolytes containing up to 2 mM of Cu(NO 3) 2. The effect of Cu(NO 3) 2 concentration on the composition, structure and thermoelectric properties of the bismuth tellurium selenide films is investigated by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and Seebeck and Hall effect measurements. A Cu(NO 3) 2 concentration of 1.5 mM is found to offer a Seebeck coefficient of up to −390 μV K−1 at room temperature, which is the highest reported to date for an electrodeposited bismuth tellurium compound. Highlights • Studies on the electrochemical fabrication of bismuth tellurium selenide are rare in the literature • First study that reports the electrochemical doping of copper into bismuth tellurium selenide thin films. • All deposits produced were n-type with a Seebeck coefficient of up to -390 μV/K • Study will open up opportunities for other researchers to explore electrochemical doping as a low cost low temperature route alternative [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Electrochemistry Communications is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.elecom.2018.10.006
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 56
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      – SubjectFull: Electrochemical analysis
        Type: general
      – SubjectFull: Copper alloys
        Type: general
      – SubjectFull: Doping agents (Chemistry)
        Type: general
      – SubjectFull: Bismuth selenide
        Type: general
      – SubjectFull: Tellurium compounds
        Type: general
      – SubjectFull: Metallic thin films
        Type: general
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      – TitleFull: Electrochemically copper-doped bismuth tellurium selenide thin films.
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            NameFull: Naylor, Andrew J.
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            – D: 01
              M: 12
              Text: Dec2018
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              Y: 2018
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              Value: 97
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            – TitleFull: Electrochemistry Communications
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