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Electrochemically copper-doped bismuth tellurium selenide thin films.

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Title: Electrochemically copper-doped bismuth tellurium selenide thin films.
Authors: Burton, Matthew R.1, Naylor, Andrew J.1, Nandhakumar, Iris S.1 iris@soton.ac.uk
Source: Electrochemistry Communications. Dec2018, Vol. 97, p56-59. 4p.
Subjects: Electrochemical analysis, Copper alloys, Doping agents (Chemistry), Bismuth selenide, Tellurium compounds, Metallic thin films
Abstract: Abstract We report the first results of a study on electrochemically doped copper bismuth tellurium selenide thin films electrodeposited from aqueous nitric acid electrolytes containing up to 2 mM of Cu(NO 3) 2. The effect of Cu(NO 3) 2 concentration on the composition, structure and thermoelectric properties of the bismuth tellurium selenide films is investigated by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and Seebeck and Hall effect measurements. A Cu(NO 3) 2 concentration of 1.5 mM is found to offer a Seebeck coefficient of up to −390 μV K−1 at room temperature, which is the highest reported to date for an electrodeposited bismuth tellurium compound. Highlights • Studies on the electrochemical fabrication of bismuth tellurium selenide are rare in the literature • First study that reports the electrochemical doping of copper into bismuth tellurium selenide thin films. • All deposits produced were n-type with a Seebeck coefficient of up to -390 μV/K • Study will open up opportunities for other researchers to explore electrochemical doping as a low cost low temperature route alternative [ABSTRACT FROM AUTHOR]
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Abstract:Abstract We report the first results of a study on electrochemically doped copper bismuth tellurium selenide thin films electrodeposited from aqueous nitric acid electrolytes containing up to 2 mM of Cu(NO 3) 2. The effect of Cu(NO 3) 2 concentration on the composition, structure and thermoelectric properties of the bismuth tellurium selenide films is investigated by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and Seebeck and Hall effect measurements. A Cu(NO 3) 2 concentration of 1.5 mM is found to offer a Seebeck coefficient of up to −390 μV K−1 at room temperature, which is the highest reported to date for an electrodeposited bismuth tellurium compound. Highlights • Studies on the electrochemical fabrication of bismuth tellurium selenide are rare in the literature • First study that reports the electrochemical doping of copper into bismuth tellurium selenide thin films. • All deposits produced were n-type with a Seebeck coefficient of up to -390 μV/K • Study will open up opportunities for other researchers to explore electrochemical doping as a low cost low temperature route alternative [ABSTRACT FROM AUTHOR]
ISSN:13882481
DOI:10.1016/j.elecom.2018.10.006