Bibliographic Details
| Title: |
Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition. |
| Authors: |
Saini, Shrikant1, Mele, Paolo2, Osugi, Shunsuke3, Adam, Malik I.4 |
| Source: |
Journal of Materials Engineering & Performance. Dec2018, Vol. 27 Issue 12, p6286-6290. 5p. |
| Subjects: |
Pulsed laser deposition, Thermoelectric materials, Energy conversion, Seebeck coefficient, Superlattices, Electric properties of thin films, Partial pressure |
| Abstract: |
We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen. [ABSTRACT FROM AUTHOR] |
|
Copyright of Journal of Materials Engineering & Performance is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| Database: |
Engineering Source |
