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GCPW GaAs Broadside Couplers at H-Band and Application to Balanced Power Amplifiers.

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Title: GCPW GaAs Broadside Couplers at H-Band and Application to Balanced Power Amplifiers.
Authors: Amado-Rey, Ana Belen (AUTHOR), Campos-Roca, Yolanda (AUTHOR), Friesicke, Christian (AUTHOR), Wagner, Sandrine (AUTHOR), Ambacher, Oliver (AUTHOR)
Source: IEEE Transactions on Microwave Theory & Techniques. Jan2019, Vol. 67 Issue 1, p78-85. 8p.
Subjects: Directional couplers, Coplanar waveguides, Substrate integrated waveguides, Electromagnetic waves, Bandwidths
Abstract: This paper reports on the first H-band broadside hybrid coupler based on a three-metallization layer process and a grounded coplanar waveguide environment. The performance of this integrated coupler is carefully examined through electromagnetic (EM) simulations and experimental evaluation, and compared to a Tandem-X hybrid, which is based on a two-metallization layer process and requires twice the chip area. The EM analysis covers S-parameter simulations of the coupler structures as well as even- and odd-mode impedance analysis of the edge- and broadside-coupled lines. The broadside hybrid exhibits insertion losses of 3.8–4.3 dB in the through and coupled ports from 246 to 297 GHz. This corresponds to a fractional bandwidth of 19%. In this frequency range, the imbalance is lower than 0.2 dB and a phase difference of 93.6° ± 1.4° is obtained. It is demonstrated that the broadside coupler overcomes the performance of Tandem-X hybrids when applied to medium power amplifiers (MPAs). An MPA monolithic microwave integrated circuit based on triple-stacked FETs and broadside couplers achieves at least 4.5 dBm at 300 GHz and large-signal gain of 7.5 dB at the 3-dB compression point. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Microwave Theory & Techniques is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 134019942
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PubTypeId: academicJournal
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  Data: GCPW GaAs Broadside Couplers at H-Band and Application to Balanced Power Amplifiers.
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  Data: <searchLink fieldCode="AR" term="%22Amado-Rey%2C+Ana+Belen%22">Amado-Rey, Ana Belen</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Campos-Roca%2C+Yolanda%22">Campos-Roca, Yolanda</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Friesicke%2C+Christian%22">Friesicke, Christian</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wagner%2C+Sandrine%22">Wagner, Sandrine</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ambacher%2C+Oliver%22">Ambacher, Oliver</searchLink> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Microwave+Theory+%26+Techniques%22">IEEE Transactions on Microwave Theory & Techniques</searchLink>. Jan2019, Vol. 67 Issue 1, p78-85. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Directional+couplers%22">Directional couplers</searchLink><br /><searchLink fieldCode="DE" term="%22Coplanar+waveguides%22">Coplanar waveguides</searchLink><br /><searchLink fieldCode="DE" term="%22Substrate+integrated+waveguides%22">Substrate integrated waveguides</searchLink><br /><searchLink fieldCode="DE" term="%22Electromagnetic+waves%22">Electromagnetic waves</searchLink><br /><searchLink fieldCode="DE" term="%22Bandwidths%22">Bandwidths</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This paper reports on the first H-band broadside hybrid coupler based on a three-metallization layer process and a grounded coplanar waveguide environment. The performance of this integrated coupler is carefully examined through electromagnetic (EM) simulations and experimental evaluation, and compared to a Tandem-X hybrid, which is based on a two-metallization layer process and requires twice the chip area. The EM analysis covers S-parameter simulations of the coupler structures as well as even- and odd-mode impedance analysis of the edge- and broadside-coupled lines. The broadside hybrid exhibits insertion losses of 3.8–4.3 dB in the through and coupled ports from 246 to 297 GHz. This corresponds to a fractional bandwidth of 19%. In this frequency range, the imbalance is lower than 0.2 dB and a phase difference of 93.6° ± 1.4° is obtained. It is demonstrated that the broadside coupler overcomes the performance of Tandem-X hybrids when applied to medium power amplifiers (MPAs). An MPA monolithic microwave integrated circuit based on triple-stacked FETs and broadside couplers achieves at least 4.5 dBm at 300 GHz and large-signal gain of 7.5 dB at the 3-dB compression point. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Transactions on Microwave Theory & Techniques is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1109/TMTT.2018.2873335
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      – Code: eng
        Text: English
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        PageCount: 8
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      – SubjectFull: Directional couplers
        Type: general
      – SubjectFull: Coplanar waveguides
        Type: general
      – SubjectFull: Substrate integrated waveguides
        Type: general
      – SubjectFull: Electromagnetic waves
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      – SubjectFull: Bandwidths
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      – TitleFull: GCPW GaAs Broadside Couplers at H-Band and Application to Balanced Power Amplifiers.
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            NameFull: Friesicke, Christian
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            NameFull: Wagner, Sandrine
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              Text: Jan2019
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