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Efficient Linear Millimeter-Wave Distributed Transceivers in CMOS SOI.

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Title: Efficient Linear Millimeter-Wave Distributed Transceivers in CMOS SOI.
Authors: Fang, Kelvin (AUTHOR), Buckwalter, James F. (AUTHOR)
Source: IEEE Transactions on Microwave Theory & Techniques. Jan2019, Vol. 67 Issue 1, p295-307. 13p.
Subjects: Complementary metal oxide semiconductors, Distributed amplifiers, Millimeter wave devices, Silicon-on-insulator technology, Time-domain analysis, Highpass electric filters
Abstract: Two $K_{u}$ - to V-band distributed amplifiers (DAs) based on nMOS and nMOS/pMOS gain stages and a distributed transceiver front end (DTFE) are presented for ultra-wideband power and low-noise amplification in a 45-nm RF CMOS silicon-on-insulator (SOI) technology. Supply scaling of gain stages through high-pass filter sections achieves high efficiency while maintaining a broadband 50- $\Omega $ match. The nMOS DA has a gain of 13 dB over a 3-dB bandwidth of 10–82 GHz and a minimum noise figure (NF) of 5.3 dB. The measured peak output power is 17.2 dBm with a peak power-added efficiency (PAE) of 17.4% at 50 GHz. The hybrid DA allows higher operating voltage and distortion cancelation of scaled pMOS devices to an achieve output power of 17.5 dBm with PAE of 20.2% and low third-order intermodulation and amplitude–phase nonlinearities. The DTFE utilizes time-domain duplexing to drive a shared antenna port for transmit (TX) and receive (RX) modes. It achieves TX gain of 11.7 dB from 12–76 GHz with peak output power of 17 dBm and PAE of 14.2%. RX gain is 9 dB from 11–77 GHz with a minimum NF of 6.2 dB. The 5-GHz wideband 16-QAM is demonstrated in the amplifier circuits for data rates exceeding 20 Gb/s. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Microwave Theory & Techniques is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Header DbId: egs
DbLabel: Engineering Source
An: 134019948
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IllustrationInfo
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  Data: Efficient Linear Millimeter-Wave Distributed Transceivers in CMOS SOI.
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  Data: <searchLink fieldCode="AR" term="%22Fang%2C+Kelvin%22">Fang, Kelvin</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Buckwalter%2C+James+F%2E%22">Buckwalter, James F.</searchLink> (AUTHOR)
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  Data: <searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Distributed+amplifiers%22">Distributed amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Millimeter+wave+devices%22">Millimeter wave devices</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon-on-insulator+technology%22">Silicon-on-insulator technology</searchLink><br /><searchLink fieldCode="DE" term="%22Time-domain+analysis%22">Time-domain analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Highpass+electric+filters%22">Highpass electric filters</searchLink>
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  Data: Two $K_{u}$ - to V-band distributed amplifiers (DAs) based on nMOS and nMOS/pMOS gain stages and a distributed transceiver front end (DTFE) are presented for ultra-wideband power and low-noise amplification in a 45-nm RF CMOS silicon-on-insulator (SOI) technology. Supply scaling of gain stages through high-pass filter sections achieves high efficiency while maintaining a broadband 50- $\Omega $ match. The nMOS DA has a gain of 13 dB over a 3-dB bandwidth of 10–82 GHz and a minimum noise figure (NF) of 5.3 dB. The measured peak output power is 17.2 dBm with a peak power-added efficiency (PAE) of 17.4% at 50 GHz. The hybrid DA allows higher operating voltage and distortion cancelation of scaled pMOS devices to an achieve output power of 17.5 dBm with PAE of 20.2% and low third-order intermodulation and amplitude–phase nonlinearities. The DTFE utilizes time-domain duplexing to drive a shared antenna port for transmit (TX) and receive (RX) modes. It achieves TX gain of 11.7 dB from 12–76 GHz with peak output power of 17 dBm and PAE of 14.2%. RX gain is 9 dB from 11–77 GHz with a minimum NF of 6.2 dB. The 5-GHz wideband 16-QAM is demonstrated in the amplifier circuits for data rates exceeding 20 Gb/s. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of IEEE Transactions on Microwave Theory & Techniques is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/TMTT.2018.2875981
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        Text: English
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        PageCount: 13
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      – SubjectFull: Complementary metal oxide semiconductors
        Type: general
      – SubjectFull: Distributed amplifiers
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      – SubjectFull: Millimeter wave devices
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      – SubjectFull: Silicon-on-insulator technology
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      – SubjectFull: Time-domain analysis
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      – SubjectFull: Highpass electric filters
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              Text: Jan2019
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