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Characterization of 8-in. wafers printed by nanoimprint lithography

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Title: Characterization of 8-in. wafers printed by nanoimprint lithography
Authors: Perret, C.1 cperret@cea.fr, Gourgon, C.1, Lazzarino, F.1, Tallal, J.1, Landis, S.2, Pelzer, R.3
Source: Microelectronic Engineering. Jun2004, Vol. 73/74, p172-177. 6p.
Subjects: Semiconductors, Lithography, Printing, Nanotechnology
Abstract: Nanoimprint lithography is a promising technique which should allow good lithography to be achieved on a large surface in a short time and by a relatively simple process. Printing processes have been already demonstrated on 6-in. wafers with a few patterns distributed across the surface. In this paper, results of fully printed 8-in. wafers are presented; it is shown that patterns in the size range of 250 nm–100 μm can be obtained by one printing step on this large surface. The defects which can appear in the polymer during the nanoimprint lithography process are studied. The defect types depend on some printing conditions: air, vacuum, residual solvent. It is demonstrated that some defects are due to Saffman–Taylor instabilities, and that capillary strengths and mold deformation are responsible for the flower defects. [Copyright &y& Elsevier]
Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 13432431
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  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Jun2004, Vol. 73/74, p172-177. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Lithography%22">Lithography</searchLink><br /><searchLink fieldCode="DE" term="%22Printing%22">Printing</searchLink><br /><searchLink fieldCode="DE" term="%22Nanotechnology%22">Nanotechnology</searchLink>
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  Data: Nanoimprint lithography is a promising technique which should allow good lithography to be achieved on a large surface in a short time and by a relatively simple process. Printing processes have been already demonstrated on 6-in. wafers with a few patterns distributed across the surface. In this paper, results of fully printed 8-in. wafers are presented; it is shown that patterns in the size range of 250 nm–100 μm can be obtained by one printing step on this large surface. The defects which can appear in the polymer during the nanoimprint lithography process are studied. The defect types depend on some printing conditions: air, vacuum, residual solvent. It is demonstrated that some defects are due to Saffman–Taylor instabilities, and that capillary strengths and mold deformation are responsible for the flower defects. [Copyright &y& Elsevier]
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  Label:
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  Data: <i>Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/S0167-9317(04)00094-2
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      – SubjectFull: Printing
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              Text: Jun2004
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              Y: 2004
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