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Characterization of silicon nanocrystals embedded in thin oxide layers by TOF-SIMS

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Title: Characterization of silicon nanocrystals embedded in thin oxide layers by TOF-SIMS
Authors: Perego, M.1 mperego@mdmlab.mi.infm.it, Ferrari, S.1, Fanciulli, M.1, Ben Assayag, G.2, Bonafos, C.2, Carrada, M.2, Claverie, A.2
Source: Applied Surface Science. Jun2004, Vol. 231-232, p813-816. 4p.
Subjects: Silicon, Nanocrystals, Oxides, Secondary ion mass spectrometry
Abstract: In this paper TOF-SIMS is used to characterize nanocrystals synthetized by ion implantation and subsequent annealing. The variation of the Sin- signals throughout the profile gives information about the chemical environment of the silicon atoms and allows to distinguish the silicon in the nanocrystals from the silicon in the oxide. The comparison with angle-resolved XPS measurements shows that the intensity of the Sin- signals depends on the oxidation state of silicon in the system.In order to evaluate nanocrystals position in the oxide layers, the problem of the depth scale calibration has been faced by comparing the results with TEM data. The values of the tunneling distance measured by TOF-SIMS and by TEM are in excellent agreement. [Copyright &y& Elsevier]
Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 13435609
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Characterization of silicon nanocrystals embedded in thin oxide layers by TOF-SIMS
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  Data: <searchLink fieldCode="JN" term="%22Applied+Surface+Science%22">Applied Surface Science</searchLink>. Jun2004, Vol. 231-232, p813-816. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Nanocrystals%22">Nanocrystals</searchLink><br /><searchLink fieldCode="DE" term="%22Oxides%22">Oxides</searchLink><br /><searchLink fieldCode="DE" term="%22Secondary+ion+mass+spectrometry%22">Secondary ion mass spectrometry</searchLink>
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  Data: In this paper TOF-SIMS is used to characterize nanocrystals synthetized by ion implantation and subsequent annealing. The variation of the Sin- signals throughout the profile gives information about the chemical environment of the silicon atoms and allows to distinguish the silicon in the nanocrystals from the silicon in the oxide. The comparison with angle-resolved XPS measurements shows that the intensity of the Sin- signals depends on the oxidation state of silicon in the system.In order to evaluate nanocrystals position in the oxide layers, the problem of the depth scale calibration has been faced by comparing the results with TEM data. The values of the tunneling distance measured by TOF-SIMS and by TEM are in excellent agreement. [Copyright &y& Elsevier]
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  Label:
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  Data: <i>Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – SubjectFull: Oxides
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              Text: Jun2004
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