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Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon.

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Title:	Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon.
Authors:	Spera, M.^1,2,3, Greco, G.¹, Lo Nigro, R.¹, Bongiorno, C.¹, Giannazzo, F.¹, Zielinski, M.⁴, La Via, F.¹, Roccaforte, F.¹ fabrizio.roccaforte@imm.cnr.it
Source:	Materials Science in Semiconductor Processing. Apr2019, Vol. 93, p295-298. 4p.
Subjects:	Ohmic contacts, Semiconductors, Silicon carbide, Thermionic emission, Electric conductivity
Abstract:	Abstract This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 °C form Ohmic contacts on moderately n-type doped 3C-SiC (N D ~1 × 1017 cm−3), with a specific contact resistance of 3.7 × 10−3 Ω cm2. The main phase formed upon annealing in this contact was nickel silicide (Ni 2 Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N A ~5 × 1019 cm−3), Ti/Al/Ni contacts were preferable to Ni ones, as they gave much lower values of the specific contact resistance (1.8 × 10−5 Ω cm2). Here, an Al 3 Ni 2 layer was formed in the uppermost part of the contact, while TiC was detected at the interface. For this system, a temperature dependent electrical characterization allowed to establish that the thermionic field emission rules the current transport at the interface. All these results can be useful for the further development of a device technology based on the 3C-SiC polytype. [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

Description
Abstract:	Abstract This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 °C form Ohmic contacts on moderately n-type doped 3C-SiC (N D ~1 × 1017 cm−3), with a specific contact resistance of 3.7 × 10−3 Ω cm2. The main phase formed upon annealing in this contact was nickel silicide (Ni 2 Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N A ~5 × 1019 cm−3), Ti/Al/Ni contacts were preferable to Ni ones, as they gave much lower values of the specific contact resistance (1.8 × 10−5 Ω cm2). Here, an Al 3 Ni 2 layer was formed in the uppermost part of the contact, while TiC was detected at the interface. For this system, a temperature dependent electrical characterization allowed to establish that the thermionic field emission rules the current transport at the interface. All these results can be useful for the further development of a device technology based on the 3C-SiC polytype. [ABSTRACT FROM AUTHOR]
ISSN:	13698001
DOI:	10.1016/j.mssp.2019.01.015