Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon.
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| Title: | Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon. |
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| Authors: | Spera, M.1,2,3, Greco, G.1, Lo Nigro, R.1, Bongiorno, C.1, Giannazzo, F.1, Zielinski, M.4, La Via, F.1, Roccaforte, F.1 fabrizio.roccaforte@imm.cnr.it |
| Source: | Materials Science in Semiconductor Processing. Apr2019, Vol. 93, p295-298. 4p. |
| Subjects: | Ohmic contacts, Semiconductors, Silicon carbide, Thermionic emission, Electric conductivity |
| Abstract: | Abstract This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 °C form Ohmic contacts on moderately n-type doped 3C-SiC (N D ~1 × 1017 cm−3), with a specific contact resistance of 3.7 × 10−3 Ω cm2. The main phase formed upon annealing in this contact was nickel silicide (Ni 2 Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N A ~5 × 1019 cm−3), Ti/Al/Ni contacts were preferable to Ni ones, as they gave much lower values of the specific contact resistance (1.8 × 10−5 Ω cm2). Here, an Al 3 Ni 2 layer was formed in the uppermost part of the contact, while TiC was detected at the interface. For this system, a temperature dependent electrical characterization allowed to establish that the thermionic field emission rules the current transport at the interface. All these results can be useful for the further development of a device technology based on the 3C-SiC polytype. [ABSTRACT FROM AUTHOR] |
| Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 134465432 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Spera%2C+M%2E%22">Spera, M.</searchLink><relatesTo>1,2,3</relatesTo><br /><searchLink fieldCode="AR" term="%22Greco%2C+G%2E%22">Greco, G.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Lo+Nigro%2C+R%2E%22">Lo Nigro, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Bongiorno%2C+C%2E%22">Bongiorno, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Giannazzo%2C+F%2E%22">Giannazzo, F.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zielinski%2C+M%2E%22">Zielinski, M.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22La+Via%2C+F%2E%22">La Via, F.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Roccaforte%2C+F%2E%22">Roccaforte, F.</searchLink><relatesTo>1</relatesTo><i> fabrizio.roccaforte@imm.cnr.it</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Materials+Science+in+Semiconductor+Processing%22">Materials Science in Semiconductor Processing</searchLink>. Apr2019, Vol. 93, p295-298. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Ohmic+contacts%22">Ohmic contacts</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+carbide%22">Silicon carbide</searchLink><br /><searchLink fieldCode="DE" term="%22Thermionic+emission%22">Thermionic emission</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+conductivity%22">Electric conductivity</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 °C form Ohmic contacts on moderately n-type doped 3C-SiC (N D ~1 × 1017 cm−3), with a specific contact resistance of 3.7 × 10−3 Ω cm2. The main phase formed upon annealing in this contact was nickel silicide (Ni 2 Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N A ~5 × 1019 cm−3), Ti/Al/Ni contacts were preferable to Ni ones, as they gave much lower values of the specific contact resistance (1.8 × 10−5 Ω cm2). Here, an Al 3 Ni 2 layer was formed in the uppermost part of the contact, while TiC was detected at the interface. For this system, a temperature dependent electrical characterization allowed to establish that the thermionic field emission rules the current transport at the interface. All these results can be useful for the further development of a device technology based on the 3C-SiC polytype. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.mssp.2019.01.015 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 295 Subjects: – SubjectFull: Ohmic contacts Type: general – SubjectFull: Semiconductors Type: general – SubjectFull: Silicon carbide Type: general – SubjectFull: Thermionic emission Type: general – SubjectFull: Electric conductivity Type: general Titles: – TitleFull: Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Spera, M. – PersonEntity: Name: NameFull: Greco, G. – PersonEntity: Name: NameFull: Lo Nigro, R. – PersonEntity: Name: NameFull: Bongiorno, C. – PersonEntity: Name: NameFull: Giannazzo, F. – PersonEntity: Name: NameFull: Zielinski, M. – PersonEntity: Name: NameFull: La Via, F. – PersonEntity: Name: NameFull: Roccaforte, F. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: Apr2019 Type: published Y: 2019 Identifiers: – Type: issn-print Value: 13698001 Numbering: – Type: volume Value: 93 Titles: – TitleFull: Materials Science in Semiconductor Processing Type: main |
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