A Fast Modular Semiconductor-Based Marx Generator for Driving Dynamic Loads.

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Title: A Fast Modular Semiconductor-Based Marx Generator for Driving Dynamic Loads.
Authors: Hochberg, Martin, Sack, Martin, Herzog, Dennis, Weisenburger, Alfons, An, Wladimir, Fetzer, Renate, Mueller, Georg
Source: IEEE Transactions on Plasma Science. Jan2019, Vol. 47 Issue 1, p627-634. 8p.
Subjects: Electron beams, Semiconductors, Electric potential, Electric inductance, Electric currents
Abstract: The challenging demands of pulsed electron beam devices (such as the GESA device) with respect to their pulsed power supply have led to the development of a new semiconductor-based Marx generator. At a maximum output voltage of 120 kV and 600-A pulse current for a duration of up to 100 $\mu \text{S}$ , stepwise arbitrary output waveforms are desired. A fast rise time of the generator is achieved by using fast switching circuitry, low inductance capacitors, and a low inductance stage arrangement. For low jitter triggering of all stages and efficient signal transmission, the generator uses an optical bus system for communication. Due to the inherent dynamic load characteristics of the GESA device, the generator features a fast overcurrent protection scheme. This paper presents selected design aspects of the generator and their validation in a small-scale assembly able of delivering up to 8 kV at 600-A load current. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Plasma Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: The challenging demands of pulsed electron beam devices (such as the GESA device) with respect to their pulsed power supply have led to the development of a new semiconductor-based Marx generator. At a maximum output voltage of 120 kV and 600-A pulse current for a duration of up to 100 $\mu \text{S}$ , stepwise arbitrary output waveforms are desired. A fast rise time of the generator is achieved by using fast switching circuitry, low inductance capacitors, and a low inductance stage arrangement. For low jitter triggering of all stages and efficient signal transmission, the generator uses an optical bus system for communication. Due to the inherent dynamic load characteristics of the GESA device, the generator features a fast overcurrent protection scheme. This paper presents selected design aspects of the generator and their validation in a small-scale assembly able of delivering up to 8 kV at 600-A load current. [ABSTRACT FROM AUTHOR]
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  Label:
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  Data: <i>Copyright of IEEE Transactions on Plasma Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/TPS.2018.2876503
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        Text: English
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        Type: general
      – SubjectFull: Semiconductors
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      – SubjectFull: Electric potential
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      – SubjectFull: Electric inductance
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      – SubjectFull: Electric currents
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              Text: Jan2019
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