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Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE.

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Title: Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE.
Authors: Bucamp, A.1, Coinon, C.1, Codron, J.-L.1, Troadec, D.1, Wallart, X.1, Desplanque, L.1 ludovic.desplanque@univ-lille.fr
Source: Journal of Crystal Growth. Apr2019, Vol. 512, p11-15. 5p.
Subjects: Quantum well devices, Quantum electronics, Nanostructured materials, Crystal growth, Atomic hydrogen, Molecular beam epitaxy
Abstract: Highlights • In-plane InGaAs nanowires are grown using selective area molecular beam epitaxy. • Growth selectivity is achieved at 470 °C thanks to an atomic hydrogen flux. • High quality InGaAs thin films grown on InP without a buffer layer are achieved. Abstract We investigate the optical and electrical properties of InGaAs thin films and nanostructures grown directly on an InP semi-insulating substrate without any buffer layer using atomic hydrogen assisted molecular beam epitaxy. We confirm the positive influence of the atomic hydrogen flux during the deoxidization process as well as during the growth itself improving the photoluminescence properties of InGaAs quantum wells. We also study the effect of the atomic hydrogen flux on the electrical properties of buffer free undoped, Te or Si doped InGaAs epilayers. Eventually, we demonstrate that atomic hydrogen flux can be used to achieve InGaAs growth selectivity with respect to a SiO 2 mask for a growth temperature as low as 470 °C and obtain in-plane InGaAs nanostructures on InP with good transport properties. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 135012893
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE.
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  Data: <searchLink fieldCode="AR" term="%22Bucamp%2C+A%2E%22">Bucamp, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Coinon%2C+C%2E%22">Coinon, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Codron%2C+J%2E-L%2E%22">Codron, J.-L.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Troadec%2C+D%2E%22">Troadec, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wallart%2C+X%2E%22">Wallart, X.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Desplanque%2C+L%2E%22">Desplanque, L.</searchLink><relatesTo>1</relatesTo><i> ludovic.desplanque@univ-lille.fr</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Crystal+Growth%22">Journal of Crystal Growth</searchLink>. Apr2019, Vol. 512, p11-15. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Quantum+well+devices%22">Quantum well devices</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+electronics%22">Quantum electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Nanostructured+materials%22">Nanostructured materials</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+growth%22">Crystal growth</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+hydrogen%22">Atomic hydrogen</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Highlights • In-plane InGaAs nanowires are grown using selective area molecular beam epitaxy. • Growth selectivity is achieved at 470 °C thanks to an atomic hydrogen flux. • High quality InGaAs thin films grown on InP without a buffer layer are achieved. Abstract We investigate the optical and electrical properties of InGaAs thin films and nanostructures grown directly on an InP semi-insulating substrate without any buffer layer using atomic hydrogen assisted molecular beam epitaxy. We confirm the positive influence of the atomic hydrogen flux during the deoxidization process as well as during the growth itself improving the photoluminescence properties of InGaAs quantum wells. We also study the effect of the atomic hydrogen flux on the electrical properties of buffer free undoped, Te or Si doped InGaAs epilayers. Eventually, we demonstrate that atomic hydrogen flux can be used to achieve InGaAs growth selectivity with respect to a SiO 2 mask for a growth temperature as low as 470 °C and obtain in-plane InGaAs nanostructures on InP with good transport properties. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.jcrysgro.2019.01.033
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 11
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      – SubjectFull: Quantum well devices
        Type: general
      – SubjectFull: Quantum electronics
        Type: general
      – SubjectFull: Nanostructured materials
        Type: general
      – SubjectFull: Crystal growth
        Type: general
      – SubjectFull: Atomic hydrogen
        Type: general
      – SubjectFull: Molecular beam epitaxy
        Type: general
    Titles:
      – TitleFull: Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE.
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              Text: Apr2019
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              Y: 2019
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              Value: 512
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