Step flow growth of Mn5Ge3 films on Ge(111) at room temperature.
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| Title: | Step flow growth of Mn5Ge3 films on Ge(111) at room temperature. |
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| Authors: | Petit, Matthieu1 (AUTHOR) matthieu.petit@univ-amu.fr, Boussadi, Amine1 (AUTHOR), Heresanu, Vasile1 (AUTHOR), Ranguis, Alain1 (AUTHOR), Michez, Lisa1 (AUTHOR) |
| Source: | Applied Surface Science. Jun2019, Vol. 480, p529-536. 8p. |
| Subjects: | Thin films, Molecular beam epitaxy, Germanium films, Numerical calculations, Surface morphology, Transmission electron microscopy |
| Abstract: | Abstract The very first stages of the non-diffusive growth of Mn 5 Ge 3 thin films on Ge(111) substrates are characterized by several techniques. Mn 5 Ge 3 films are grown by molecular beam epitaxy using the co-deposition of Mn and Ge atoms at room temperature. XRD measurements demonstrate that the thin films are monocrystalline. The evolution of the RHEED intensity during the deposition and the AFM images show a step-flow growth mode. RHEED patterns, combined with TEM images, prove that the lattice mismatch of 3.7% is accommodated by the formation of an array of interfacial dislocations and by the presence of a residual strain in the thin films. These observations are supported by the numerical calculations of the critical nucleation volumes exhibiting very similar values, in the case of a pseudomorphic growth or in the case of an accommodation of the lattice mismatch by interfacial dislocations. Furthermore, the effect Ge/Mn stoichiometric and Mn-rich fluxes on the surface morphology is examined. Graphical Abstract Unlabelled Image Highlights • The very first stages of the non-diffusive epitaxy of Mn 5 Ge 3 on Ge are presented. • The Mn 5 Ge 3 films grow according to a step flow mode with meandering instabilities. • The lattice mismatch is adapted by interfacial dislocations and a slightly strained layer. [ABSTRACT FROM AUTHOR] |
| Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 135685869 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Step flow growth of Mn5Ge3 films on Ge(111) at room temperature. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Petit%2C+Matthieu%22">Petit, Matthieu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> matthieu.petit@univ-amu.fr</i><br /><searchLink fieldCode="AR" term="%22Boussadi%2C+Amine%22">Boussadi, Amine</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Heresanu%2C+Vasile%22">Heresanu, Vasile</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ranguis%2C+Alain%22">Ranguis, Alain</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Michez%2C+Lisa%22">Michez, Lisa</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Surface+Science%22">Applied Surface Science</searchLink>. Jun2019, Vol. 480, p529-536. 8p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium+films%22">Germanium films</searchLink><br /><searchLink fieldCode="DE" term="%22Numerical+calculations%22">Numerical calculations</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+morphology%22">Surface morphology</searchLink><br /><searchLink fieldCode="DE" term="%22Transmission+electron+microscopy%22">Transmission electron microscopy</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract The very first stages of the non-diffusive growth of Mn 5 Ge 3 thin films on Ge(111) substrates are characterized by several techniques. Mn 5 Ge 3 films are grown by molecular beam epitaxy using the co-deposition of Mn and Ge atoms at room temperature. XRD measurements demonstrate that the thin films are monocrystalline. The evolution of the RHEED intensity during the deposition and the AFM images show a step-flow growth mode. RHEED patterns, combined with TEM images, prove that the lattice mismatch of 3.7% is accommodated by the formation of an array of interfacial dislocations and by the presence of a residual strain in the thin films. These observations are supported by the numerical calculations of the critical nucleation volumes exhibiting very similar values, in the case of a pseudomorphic growth or in the case of an accommodation of the lattice mismatch by interfacial dislocations. Furthermore, the effect Ge/Mn stoichiometric and Mn-rich fluxes on the surface morphology is examined. Graphical Abstract Unlabelled Image Highlights • The very first stages of the non-diffusive epitaxy of Mn 5 Ge 3 on Ge are presented. • The Mn 5 Ge 3 films grow according to a step flow mode with meandering instabilities. • The lattice mismatch is adapted by interfacial dislocations and a slightly strained layer. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.apsusc.2019.01.164 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 529 Subjects: – SubjectFull: Thin films Type: general – SubjectFull: Molecular beam epitaxy Type: general – SubjectFull: Germanium films Type: general – SubjectFull: Numerical calculations Type: general – SubjectFull: Surface morphology Type: general – SubjectFull: Transmission electron microscopy Type: general Titles: – TitleFull: Step flow growth of Mn5Ge3 films on Ge(111) at room temperature. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Petit, Matthieu – PersonEntity: Name: NameFull: Boussadi, Amine – PersonEntity: Name: NameFull: Heresanu, Vasile – PersonEntity: Name: NameFull: Ranguis, Alain – PersonEntity: Name: NameFull: Michez, Lisa IsPartOfRelationships: – BibEntity: Dates: – D: 30 M: 06 Text: Jun2019 Type: published Y: 2019 Identifiers: – Type: issn-print Value: 01694332 Numbering: – Type: volume Value: 480 Titles: – TitleFull: Applied Surface Science Type: main |
| ResultId | 1 |
