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Buoyancy Convection During the Growth of SixGe1-x by the Traveling Solvent Method (TSM).

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Title: Buoyancy Convection During the Growth of SixGe1-x by the Traveling Solvent Method (TSM).
Authors: Saghir, M. Z.1, Makriyannis, T. J.1, Labrie, D.2
Source: Journal of Fluids Engineering. Mar2004, Vol. 126 Issue 2, p223-228. 6p. 3 Diagrams, 1 Chart, 3 Graphs.
Subjects: Solvents, Crystals, Fluid dynamics, Fluids, Viscous flow
Abstract: The traveling solvent method known as TSM is a process used to produce pure and homogeneous crystals structures. TSM has been tested on many alloys producing uniform and uncontaminated single crystals. In the present study the effect of buoyancy convection on the growth of the Si0.02Ge0.98 crystal grown by the traveling solvent method is investigated under different heating conditions. The full Navier-Stokes equations together with the energy and solutal equations are solved numerically using the finite element technique. The model takes into consideration the losses of heat by radiation and the use of the phase diagram to determine the silicon concentration at the growth interface. Results reveal a strong convection in the solvent, which in turn is detrimental to the growth uniformity in the crystal rod. Additional numerical results show that the convective heat transfer significantly influences the solute distribution in the liquid zone and affects the growth rate substantially. Qualitative comparison of the numerical results with the experiment conducted at Dalhousie University showed a good agreement for the silicon concentration at the growth interface. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Fluids Engineering is the property of American Society of Mechanical Engineers and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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  Data: Buoyancy Convection During the Growth of Si<subscript>x</subscript>Ge<subscript>1-x</subscript> by the Traveling Solvent Method (TSM).
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  Data: <searchLink fieldCode="AR" term="%22Saghir%2C+M%2E+Z%2E%22">Saghir, M. Z.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Makriyannis%2C+T%2E+J%2E%22">Makriyannis, T. J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Labrie%2C+D%2E%22">Labrie, D.</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Fluids+Engineering%22">Journal of Fluids Engineering</searchLink>. Mar2004, Vol. 126 Issue 2, p223-228. 6p. 3 Diagrams, 1 Chart, 3 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22Solvents%22">Solvents</searchLink><br /><searchLink fieldCode="DE" term="%22Crystals%22">Crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Fluid+dynamics%22">Fluid dynamics</searchLink><br /><searchLink fieldCode="DE" term="%22Fluids%22">Fluids</searchLink><br /><searchLink fieldCode="DE" term="%22Viscous+flow%22">Viscous flow</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: The traveling solvent method known as TSM is a process used to produce pure and homogeneous crystals structures. TSM has been tested on many alloys producing uniform and uncontaminated single crystals. In the present study the effect of buoyancy convection on the growth of the Si0.02Ge0.98 crystal grown by the traveling solvent method is investigated under different heating conditions. The full Navier-Stokes equations together with the energy and solutal equations are solved numerically using the finite element technique. The model takes into consideration the losses of heat by radiation and the use of the phase diagram to determine the silicon concentration at the growth interface. Results reveal a strong convection in the solvent, which in turn is detrimental to the growth uniformity in the crystal rod. Additional numerical results show that the convective heat transfer significantly influences the solute distribution in the liquid zone and affects the growth rate substantially. Qualitative comparison of the numerical results with the experiment conducted at Dalhousie University showed a good agreement for the silicon concentration at the growth interface. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Fluids Engineering is the property of American Society of Mechanical Engineers and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1115/1.1669414
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        Text: English
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        PageCount: 6
        StartPage: 223
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      – SubjectFull: Solvents
        Type: general
      – SubjectFull: Crystals
        Type: general
      – SubjectFull: Fluid dynamics
        Type: general
      – SubjectFull: Fluids
        Type: general
      – SubjectFull: Viscous flow
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      – TitleFull: Buoyancy Convection During the Growth of SixGe1-x by the Traveling Solvent Method (TSM).
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              M: 03
              Text: Mar2004
              Type: published
              Y: 2004
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