Impact of Mn3+ substitution on magnetization and electric polarization behavior in geometry frustrated CuFe1−xMnxO2.

Saved in:
Bibliographic Details
Title: Impact of Mn3+ substitution on magnetization and electric polarization behavior in geometry frustrated CuFe1−xMnxO2.
Authors: Xiao, Guiling1, Xia, Zhengcai1 xia9020@hust.edu.cn, Zhang, Xiaoxing1, Song, Yujie1, Huang, Sha1, Yang, Feng1, Jiang, Dequan1, Deng, Han1, Ouyang, Zhongwen1, Shi, Liran2
Source: Journal of Materials Science: Materials in Electronics. May2019, Vol. 30 Issue 10, p9531-9539. 9p.
Subjects: Magnetization, Manganese, Polarization (Electricity), Magnetic fields, Magnetic anisotropy
Abstract: The Mn3+ doped single crystal samples CuFe1−xMnxO2 with x = 0.01, 0.03 and 0.05 were synthetic by floating zone method, and their magnetization and electric polarization were measured with static and pulsed high magnetic field up to 50 T in the temperature ranging from 2 to 300 K. A series of field-induced magnetic phase transitions and electric polarization, which show obviously anisotropy, were observed in all the doped samples, and their critical fields were directly related to the Mn3+ doping level. The pulsed high magnetic dielectric polarization measurements show that, in the ferroelectric incommensurate phase, the spontaneous electric polarization region is enhanced by the Mn3+ dopant. The impact of the Mn3+ substitution on magnetic and electric polarization behaviors may associate with the partial release of spin frustration in the CuFeO2. Based on the experimental results, the impact of Mn3+ doping on the magnetization and electric polarization behavior as well as their anisotropy are investigated and a detailed magnetic diagram are assumed. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: egs
DbLabel: Engineering Source
An: 136541121
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Impact of Mn<superscript>3+</superscript> substitution on magnetization and electric polarization behavior in geometry frustrated CuFe<subscript>1−x</subscript>Mn<subscript>x</subscript>O<subscript>2</subscript>.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Xiao%2C+Guiling%22">Xiao, Guiling</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Xia%2C+Zhengcai%22">Xia, Zhengcai</searchLink><relatesTo>1</relatesTo><i> xia9020@hust.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Xiaoxing%22">Zhang, Xiaoxing</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Song%2C+Yujie%22">Song, Yujie</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Huang%2C+Sha%22">Huang, Sha</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Yang%2C+Feng%22">Yang, Feng</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Jiang%2C+Dequan%22">Jiang, Dequan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Deng%2C+Han%22">Deng, Han</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ouyang%2C+Zhongwen%22">Ouyang, Zhongwen</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Shi%2C+Liran%22">Shi, Liran</searchLink><relatesTo>2</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. May2019, Vol. 30 Issue 10, p9531-9539. 9p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Magnetization%22">Magnetization</searchLink><br /><searchLink fieldCode="DE" term="%22Manganese%22">Manganese</searchLink><br /><searchLink fieldCode="DE" term="%22Polarization+%28Electricity%29%22">Polarization (Electricity)</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetic+fields%22">Magnetic fields</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetic+anisotropy%22">Magnetic anisotropy</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The Mn3+ doped single crystal samples CuFe1−xMnxO2 with x = 0.01, 0.03 and 0.05 were synthetic by floating zone method, and their magnetization and electric polarization were measured with static and pulsed high magnetic field up to 50 T in the temperature ranging from 2 to 300 K. A series of field-induced magnetic phase transitions and electric polarization, which show obviously anisotropy, were observed in all the doped samples, and their critical fields were directly related to the Mn3+ doping level. The pulsed high magnetic dielectric polarization measurements show that, in the ferroelectric incommensurate phase, the spontaneous electric polarization region is enhanced by the Mn3+ dopant. The impact of the Mn3+ substitution on magnetic and electric polarization behaviors may associate with the partial release of spin frustration in the CuFeO2. Based on the experimental results, the impact of Mn3+ doping on the magnetization and electric polarization behavior as well as their anisotropy are investigated and a detailed magnetic diagram are assumed. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=136541121
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-019-01285-1
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 9531
    Subjects:
      – SubjectFull: Magnetization
        Type: general
      – SubjectFull: Manganese
        Type: general
      – SubjectFull: Polarization (Electricity)
        Type: general
      – SubjectFull: Magnetic fields
        Type: general
      – SubjectFull: Magnetic anisotropy
        Type: general
    Titles:
      – TitleFull: Impact of Mn3+ substitution on magnetization and electric polarization behavior in geometry frustrated CuFe1−xMnxO2.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Xiao, Guiling
      – PersonEntity:
          Name:
            NameFull: Xia, Zhengcai
      – PersonEntity:
          Name:
            NameFull: Zhang, Xiaoxing
      – PersonEntity:
          Name:
            NameFull: Song, Yujie
      – PersonEntity:
          Name:
            NameFull: Huang, Sha
      – PersonEntity:
          Name:
            NameFull: Yang, Feng
      – PersonEntity:
          Name:
            NameFull: Jiang, Dequan
      – PersonEntity:
          Name:
            NameFull: Deng, Han
      – PersonEntity:
          Name:
            NameFull: Ouyang, Zhongwen
      – PersonEntity:
          Name:
            NameFull: Shi, Liran
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 15
              M: 05
              Text: May2019
              Type: published
              Y: 2019
          Identifiers:
            – Type: issn-print
              Value: 09574522
          Numbering:
            – Type: volume
              Value: 30
            – Type: issue
              Value: 10
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
ResultId 1