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Hydride Vapor-Phase Epitaxial GaN Thick Films for Quasi-Substrate Applications: Strain Distribution and Wafer Bending.

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Title: Hydride Vapor-Phase Epitaxial GaN Thick Films for Quasi-Substrate Applications: Strain Distribution and Wafer Bending.
Authors: Paskova, T.1 tanya@ifm.liu.se, Darakchieva, V.1, Valcheva, E.1, Paskov, P. P.1, Ivanov, I. G.1, Monemar, B.1, Böttcher, T.2, Roder, C.2, Hommel, D.2
Source: Journal of Electronic Materials. May2004, Vol. 33 Issue 5, p389-394. 6p. 1 Diagram, 1 Chart, 4 Graphs.
Subjects: Photoluminescence, Epitaxy, Lattice theory, Strains & stresses (Mechanics), X-rays
Abstract: The strain distribution in thick hydride vapor-phase epitaxial (HVPE)-GaN layers grown on metal-organic vapor-phase epitaxial GaN templates was studied by means of photoluminescence, x-ray mapping, and lattice parameter analysis. A variable temperature x-ray study of the film curvature was used for verification of the strain type. The relation between the strain inhomogeneity and the wafer bending in films residing on sapphire and freestanding on the thickness of the layer and the substrate is analyzed. Possibilities to improve the uniformity of the film characteristics and to reduce the bending of the HVPE-GaN films are discussed. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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  Data: Hydride Vapor-Phase Epitaxial GaN Thick Films for Quasi-Substrate Applications: Strain Distribution and Wafer Bending.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. May2004, Vol. 33 Issue 5, p389-394. 6p. 1 Diagram, 1 Chart, 4 Graphs.
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  Data: The strain distribution in thick hydride vapor-phase epitaxial (HVPE)-GaN layers grown on metal-organic vapor-phase epitaxial GaN templates was studied by means of photoluminescence, x-ray mapping, and lattice parameter analysis. A variable temperature x-ray study of the film curvature was used for verification of the strain type. The relation between the strain inhomogeneity and the wafer bending in films residing on sapphire and freestanding on the thickness of the layer and the substrate is analyzed. Possibilities to improve the uniformity of the film characteristics and to reduce the bending of the HVPE-GaN films are discussed. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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