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Tunnel-Oxide Breakdown Characteristics of Floating-Gate-Type EEPROM.

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Title: Tunnel-Oxide Breakdown Characteristics of Floating-Gate-Type EEPROM.
Authors: Sato, Kazuo1, Fukuzaki, Yoshiki1, Hatakeyama, Shinichi2, Ikeda, Nobuyuki2
Source: Electronics & Communications in Japan, Part 2: Electronics. Oct89, Vol. 72 Issue 10, p1-8. 8p.
Subjects: Computer storage devices, Read-only memory, Rewriting systems (Computer science), Electronics, Machine theory
Abstract: This paper aims at the analysis of the breakdown characteristics and the mechanism of the tunnel oxide breakdown by the iterative rewriting of floating-gate-type EEPROM. The relation of number of rewritings until the tunnel oxide breakdown to the rewriting condition and the process condition is investigated. As a result, an approximate relation log N∞Qfg is derived, where N is the number of rewritings until the tunnel oxide breakdown and Qfg is the tunnel charge in rewriting. It was seen also that N is nearly proportional to the life of the tunnel oxide determined from TDDB characteristic. It is estimated that the major cause of the tunnel oxide breakdown is the trap of the electron in the tunnel oxide. The trapped electron can easily be released by the thermal treatment of some 5 hours, improving the life of the number of rewritings until breakdown. [ABSTRACT FROM AUTHOR]
Copyright of Electronics & Communications in Japan, Part 2: Electronics is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Header DbId: egs
DbLabel: Engineering Source
An: 13865534
AccessLevel: 6
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PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Tunnel-Oxide Breakdown Characteristics of Floating-Gate-Type EEPROM.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Sato%2C+Kazuo%22">Sato, Kazuo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Fukuzaki%2C+Yoshiki%22">Fukuzaki, Yoshiki</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hatakeyama%2C+Shinichi%22">Hatakeyama, Shinichi</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Ikeda%2C+Nobuyuki%22">Ikeda, Nobuyuki</searchLink><relatesTo>2</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Electronics+%26+Communications+in+Japan%2C+Part+2%3A+Electronics%22">Electronics & Communications in Japan, Part 2: Electronics</searchLink>. Oct89, Vol. 72 Issue 10, p1-8. 8p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Computer+storage+devices%22">Computer storage devices</searchLink><br /><searchLink fieldCode="DE" term="%22Read-only+memory%22">Read-only memory</searchLink><br /><searchLink fieldCode="DE" term="%22Rewriting+systems+%28Computer+science%29%22">Rewriting systems (Computer science)</searchLink><br /><searchLink fieldCode="DE" term="%22Electronics%22">Electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Machine+theory%22">Machine theory</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This paper aims at the analysis of the breakdown characteristics and the mechanism of the tunnel oxide breakdown by the iterative rewriting of floating-gate-type EEPROM. The relation of number of rewritings until the tunnel oxide breakdown to the rewriting condition and the process condition is investigated. As a result, an approximate relation log N∞Qfg is derived, where N is the number of rewritings until the tunnel oxide breakdown and Qfg is the tunnel charge in rewriting. It was seen also that N is nearly proportional to the life of the tunnel oxide determined from TDDB characteristic. It is estimated that the major cause of the tunnel oxide breakdown is the trap of the electron in the tunnel oxide. The trapped electron can easily be released by the thermal treatment of some 5 hours, improving the life of the number of rewritings until breakdown. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Electronics & Communications in Japan, Part 2: Electronics is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1002/ecjb.4420721001
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 1
    Subjects:
      – SubjectFull: Computer storage devices
        Type: general
      – SubjectFull: Read-only memory
        Type: general
      – SubjectFull: Rewriting systems (Computer science)
        Type: general
      – SubjectFull: Electronics
        Type: general
      – SubjectFull: Machine theory
        Type: general
    Titles:
      – TitleFull: Tunnel-Oxide Breakdown Characteristics of Floating-Gate-Type EEPROM.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Sato, Kazuo
      – PersonEntity:
          Name:
            NameFull: Fukuzaki, Yoshiki
      – PersonEntity:
          Name:
            NameFull: Hatakeyama, Shinichi
      – PersonEntity:
          Name:
            NameFull: Ikeda, Nobuyuki
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 10
              Text: Oct89
              Type: published
              Y: 1989
          Identifiers:
            – Type: issn-print
              Value: 8756663X
          Numbering:
            – Type: volume
              Value: 72
            – Type: issue
              Value: 10
          Titles:
            – TitleFull: Electronics & Communications in Japan, Part 2: Electronics
              Type: main
ResultId 1