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Very High-Speed ROM Using Bipolar/CMOS Technology.

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Title: Very High-Speed ROM Using Bipolar/CMOS Technology.
Authors: Kurita, Koozaburoo1, Hotta, Takasi1, Ueno, Masahiro2, Hotta, Atsuo3
Source: Electronics & Communications in Japan, Part 2: Electronics. Jul88, Vol. 71 Issue 7, p18-26. 9p.
Subjects: Read-only memory, Complementary metal oxide semiconductors, Microprogramming, Computer programming, Bipolar transistors, Integrated circuits
Abstract: It is a common price to realize the internal control of a logic LSI by means of a microprogramming method. A high-speed operation ROM (micro ROM) which stores this microprogram code. This paper proposes a new circuit configuration derived from a combination of bipolar and CMOS technology for a high-speed micro ROM. In this configuration, the memory cell array is made of MOS transistors while the array is made of MOS transistors while the array periphery consists of a bipolar/CMOS composite circuit in which a high driving capability and a large gm of the bipolar transistor are used so that a high degree of integration and a high speed are attained simultaneously. To confirm the high-speed characteristic of the proposed circuit, a micro ROM of 2 k words x 64 bits has been fabricated with the 2 µm HI-BiCMOS process mixing the bipolar and CMOS structures. The test results of the fabricated device have a minimum read-out cycle time of 16 ns which is more than twice that of a CMOS circuit having an identical configuration. [ABSTRACT FROM AUTHOR]
Copyright of Electronics & Communications in Japan, Part 2: Electronics is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 13935883
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: <searchLink fieldCode="JN" term="%22Electronics+%26+Communications+in+Japan%2C+Part+2%3A+Electronics%22">Electronics & Communications in Japan, Part 2: Electronics</searchLink>. Jul88, Vol. 71 Issue 7, p18-26. 9p.
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  Data: <searchLink fieldCode="DE" term="%22Read-only+memory%22">Read-only memory</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Microprogramming%22">Microprogramming</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+programming%22">Computer programming</searchLink><br /><searchLink fieldCode="DE" term="%22Bipolar+transistors%22">Bipolar transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Integrated+circuits%22">Integrated circuits</searchLink>
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  Data: It is a common price to realize the internal control of a logic LSI by means of a microprogramming method. A high-speed operation ROM (micro ROM) which stores this microprogram code. This paper proposes a new circuit configuration derived from a combination of bipolar and CMOS technology for a high-speed micro ROM. In this configuration, the memory cell array is made of MOS transistors while the array is made of MOS transistors while the array periphery consists of a bipolar/CMOS composite circuit in which a high driving capability and a large gm of the bipolar transistor are used so that a high degree of integration and a high speed are attained simultaneously. To confirm the high-speed characteristic of the proposed circuit, a micro ROM of 2 k words x 64 bits has been fabricated with the 2 µm HI-BiCMOS process mixing the bipolar and CMOS structures. The test results of the fabricated device have a minimum read-out cycle time of 16 ns which is more than twice that of a CMOS circuit having an identical configuration. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Electronics & Communications in Japan, Part 2: Electronics is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1002/ecjb.4420710703
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 9
        StartPage: 18
    Subjects:
      – SubjectFull: Read-only memory
        Type: general
      – SubjectFull: Complementary metal oxide semiconductors
        Type: general
      – SubjectFull: Microprogramming
        Type: general
      – SubjectFull: Computer programming
        Type: general
      – SubjectFull: Bipolar transistors
        Type: general
      – SubjectFull: Integrated circuits
        Type: general
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      – TitleFull: Very High-Speed ROM Using Bipolar/CMOS Technology.
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            NameFull: Kurita, Koozaburoo
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            NameFull: Hotta, Takasi
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            NameFull: Ueno, Masahiro
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            NameFull: Hotta, Atsuo
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          Dates:
            – D: 01
              M: 07
              Text: Jul88
              Type: published
              Y: 1988
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              Value: 8756663X
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              Value: 71
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              Value: 7
          Titles:
            – TitleFull: Electronics & Communications in Japan, Part 2: Electronics
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