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Centimetric CrSi2 crystal grown by the vertical gradient Freeze method.

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Title: Centimetric CrSi2 crystal grown by the vertical gradient Freeze method.
Authors: Moll, A.1 (AUTHOR) moll.adrien@orange.fr, Laborde, S.1 (AUTHOR), Barou, F.2 (AUTHOR), Beaudhuin, M.1 (AUTHOR) mickael.beaudhuin@umontpellier.fr
Source: Journal of Crystal Growth. Mar2020, Vol. 534, pN.PAG-N.PAG. 1p.
Subjects: Boron, Boron nitride, Liquid alloys, Single crystals, Boriding, Boron compounds, Crystals
Abstract: • Vertical Gradient Freeze method enables to grow CrSi 2 ingots. • High quality single crystal was obtained with a mosaicity lower than 2°. • The growth conditions are 10 mm/h, 0.6 K/mm in pBN crucible. • SiO 2 BN-coated crucibles are not suitable to grow CrSi 2 in presence of carbon. • Increasing the growth rate favor random grain orientation of polycrystalline CrSi 2. CrSi 2 ingots were grown by the Vertical Gradient Freeze (VGF) method in silica (SiO 2) crucibles with boron nitride (BN) coating and in pyrolytic boron nitride (pBN) crucibles in order to minimize the sticking and the reaction with the molten Cr-Si alloy. High quality chromium disilicide single crystal was obtained with a mosaicity of 1–2° using pBN crucible with a thermal gradient of 0.6 K/mm and a growth rate of 10 mm/h. To recycle the crucibles and so to reduce the production costs, pBN crucibles were cleaned with hydrofluoric acid solution. As a result of this treatment, it was not possible to obtain CrSi 2 single crystals due to a modification of the crucible surface and the subsequent increase of boron compounds in the melt during the growth. The effect of the growth conditions on the microstructure of polycrystalline sample was also investigated using the texture analysis technique. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:• Vertical Gradient Freeze method enables to grow CrSi 2 ingots. • High quality single crystal was obtained with a mosaicity lower than 2°. • The growth conditions are 10 mm/h, 0.6 K/mm in pBN crucible. • SiO 2 BN-coated crucibles are not suitable to grow CrSi 2 in presence of carbon. • Increasing the growth rate favor random grain orientation of polycrystalline CrSi 2. CrSi 2 ingots were grown by the Vertical Gradient Freeze (VGF) method in silica (SiO 2) crucibles with boron nitride (BN) coating and in pyrolytic boron nitride (pBN) crucibles in order to minimize the sticking and the reaction with the molten Cr-Si alloy. High quality chromium disilicide single crystal was obtained with a mosaicity of 1–2° using pBN crucible with a thermal gradient of 0.6 K/mm and a growth rate of 10 mm/h. To recycle the crucibles and so to reduce the production costs, pBN crucibles were cleaned with hydrofluoric acid solution. As a result of this treatment, it was not possible to obtain CrSi 2 single crystals due to a modification of the crucible surface and the subsequent increase of boron compounds in the melt during the growth. The effect of the growth conditions on the microstructure of polycrystalline sample was also investigated using the texture analysis technique. [ABSTRACT FROM AUTHOR]
ISSN:00220248
DOI:10.1016/j.jcrysgro.2020.125505