Centimetric CrSi2 crystal grown by the vertical gradient Freeze method.
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| Title: | Centimetric CrSi2 crystal grown by the vertical gradient Freeze method. |
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| Authors: | Moll, A.1 (AUTHOR) moll.adrien@orange.fr, Laborde, S.1 (AUTHOR), Barou, F.2 (AUTHOR), Beaudhuin, M.1 (AUTHOR) mickael.beaudhuin@umontpellier.fr |
| Source: | Journal of Crystal Growth. Mar2020, Vol. 534, pN.PAG-N.PAG. 1p. |
| Subjects: | Boron, Boron nitride, Liquid alloys, Single crystals, Boriding, Boron compounds, Crystals |
| Abstract: | • Vertical Gradient Freeze method enables to grow CrSi 2 ingots. • High quality single crystal was obtained with a mosaicity lower than 2°. • The growth conditions are 10 mm/h, 0.6 K/mm in pBN crucible. • SiO 2 BN-coated crucibles are not suitable to grow CrSi 2 in presence of carbon. • Increasing the growth rate favor random grain orientation of polycrystalline CrSi 2. CrSi 2 ingots were grown by the Vertical Gradient Freeze (VGF) method in silica (SiO 2) crucibles with boron nitride (BN) coating and in pyrolytic boron nitride (pBN) crucibles in order to minimize the sticking and the reaction with the molten Cr-Si alloy. High quality chromium disilicide single crystal was obtained with a mosaicity of 1–2° using pBN crucible with a thermal gradient of 0.6 K/mm and a growth rate of 10 mm/h. To recycle the crucibles and so to reduce the production costs, pBN crucibles were cleaned with hydrofluoric acid solution. As a result of this treatment, it was not possible to obtain CrSi 2 single crystals due to a modification of the crucible surface and the subsequent increase of boron compounds in the melt during the growth. The effect of the growth conditions on the microstructure of polycrystalline sample was also investigated using the texture analysis technique. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 141775490 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Centimetric CrSi2 crystal grown by the vertical gradient Freeze method. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Moll%2C+A%2E%22">Moll, A.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> moll.adrien@orange.fr</i><br /><searchLink fieldCode="AR" term="%22Laborde%2C+S%2E%22">Laborde, S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Barou%2C+F%2E%22">Barou, F.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Beaudhuin%2C+M%2E%22">Beaudhuin, M.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> mickael.beaudhuin@umontpellier.fr</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Crystal+Growth%22">Journal of Crystal Growth</searchLink>. Mar2020, Vol. 534, pN.PAG-N.PAG. 1p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Boron%22">Boron</searchLink><br /><searchLink fieldCode="DE" term="%22Boron+nitride%22">Boron nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Liquid+alloys%22">Liquid alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Single+crystals%22">Single crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Boriding%22">Boriding</searchLink><br /><searchLink fieldCode="DE" term="%22Boron+compounds%22">Boron compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Crystals%22">Crystals</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: • Vertical Gradient Freeze method enables to grow CrSi 2 ingots. • High quality single crystal was obtained with a mosaicity lower than 2°. • The growth conditions are 10 mm/h, 0.6 K/mm in pBN crucible. • SiO 2 BN-coated crucibles are not suitable to grow CrSi 2 in presence of carbon. • Increasing the growth rate favor random grain orientation of polycrystalline CrSi 2. CrSi 2 ingots were grown by the Vertical Gradient Freeze (VGF) method in silica (SiO 2) crucibles with boron nitride (BN) coating and in pyrolytic boron nitride (pBN) crucibles in order to minimize the sticking and the reaction with the molten Cr-Si alloy. High quality chromium disilicide single crystal was obtained with a mosaicity of 1–2° using pBN crucible with a thermal gradient of 0.6 K/mm and a growth rate of 10 mm/h. To recycle the crucibles and so to reduce the production costs, pBN crucibles were cleaned with hydrofluoric acid solution. As a result of this treatment, it was not possible to obtain CrSi 2 single crystals due to a modification of the crucible surface and the subsequent increase of boron compounds in the melt during the growth. The effect of the growth conditions on the microstructure of polycrystalline sample was also investigated using the texture analysis technique. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.jcrysgro.2020.125505 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 1 StartPage: N.PAG Subjects: – SubjectFull: Boron Type: general – SubjectFull: Boron nitride Type: general – SubjectFull: Liquid alloys Type: general – SubjectFull: Single crystals Type: general – SubjectFull: Boriding Type: general – SubjectFull: Boron compounds Type: general – SubjectFull: Crystals Type: general Titles: – TitleFull: Centimetric CrSi2 crystal grown by the vertical gradient Freeze method. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Moll, A. – PersonEntity: Name: NameFull: Laborde, S. – PersonEntity: Name: NameFull: Barou, F. – PersonEntity: Name: NameFull: Beaudhuin, M. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 03 Text: Mar2020 Type: published Y: 2020 Identifiers: – Type: issn-print Value: 00220248 Numbering: – Type: volume Value: 534 Titles: – TitleFull: Journal of Crystal Growth Type: main |
| ResultId | 1 |