View in EDS

LOCALIZATION OF SOFT TUNGSTEN CONTACT FAILS WITH RELIABILITY IMPLICATIONS BY INNOVATIVE REVERSE ENGINEERING TECHNIQUES.

Saved in:
Bibliographic Details
Title: LOCALIZATION OF SOFT TUNGSTEN CONTACT FAILS WITH RELIABILITY IMPLICATIONS BY INNOVATIVE REVERSE ENGINEERING TECHNIQUES.
Authors: Touzel, J.1, Neumann, I.1, Lorenz, H.1, Boit, C.1, Köner, H.1, Schurg, S.2
Source: Quality & Reliability Engineering International. Jul/Aug96, Vol. 12 Issue 4, p259-264. 6p.
Subjects: Reverse engineering, Tungsten, Reliability in engineering, Systems engineering, Maintainability (Engineering), Microelectronics
Abstract: Tungsten contacts mostly fail because of a defective bottom barrier which in turn may find its origin in technological problems with contact etch, bather or tungsten deposition. Owing to the often unstable electrical properties of those contacts, detection in electrical test or non-destructive localization techniques is time-consuming or even unsuccessful. The reverse engineering techniques presented here supply 100% identification and localization of the failing contacts. They reveal a disturbed region under a harrier defect produced by the aggressive chemical reaction of fluorine radicals from WE6 deposition with silicon to the gaseous SiF4. The market contacts exceed the detection fails by far. Some failing contacts may slip through relaxed test conditions-the majority of them, though, still work and indicate a potential of reliability problems as could be demonstrated on chips failing the burn-in. Thus, an analysis and classification of the contacts at the wafer level in the presented way allows an identification and first step to estimation of reliability yield risks. [ABSTRACT FROM AUTHOR]
Copyright of Quality & Reliability Engineering International is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 14477433
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: LOCALIZATION OF SOFT TUNGSTEN CONTACT FAILS WITH RELIABILITY IMPLICATIONS BY INNOVATIVE REVERSE ENGINEERING TECHNIQUES.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Touzel%2C+J%2E%22">Touzel, J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Neumann%2C+I%2E%22">Neumann, I.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Lorenz%2C+H%2E%22">Lorenz, H.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Boit%2C+C%2E%22">Boit, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Köner%2C+H%2E%22">Köner, H.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Schurg%2C+S%2E%22">Schurg, S.</searchLink><relatesTo>2</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Quality+%26+Reliability+Engineering+International%22">Quality & Reliability Engineering International</searchLink>. Jul/Aug96, Vol. 12 Issue 4, p259-264. 6p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Reverse+engineering%22">Reverse engineering</searchLink><br /><searchLink fieldCode="DE" term="%22Tungsten%22">Tungsten</searchLink><br /><searchLink fieldCode="DE" term="%22Reliability+in+engineering%22">Reliability in engineering</searchLink><br /><searchLink fieldCode="DE" term="%22Systems+engineering%22">Systems engineering</searchLink><br /><searchLink fieldCode="DE" term="%22Maintainability+%28Engineering%29%22">Maintainability (Engineering)</searchLink><br /><searchLink fieldCode="DE" term="%22Microelectronics%22">Microelectronics</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Tungsten contacts mostly fail because of a defective bottom barrier which in turn may find its origin in technological problems with contact etch, bather or tungsten deposition. Owing to the often unstable electrical properties of those contacts, detection in electrical test or non-destructive localization techniques is time-consuming or even unsuccessful. The reverse engineering techniques presented here supply 100% identification and localization of the failing contacts. They reveal a disturbed region under a harrier defect produced by the aggressive chemical reaction of fluorine radicals from WE6 deposition with silicon to the gaseous SiF4. The market contacts exceed the detection fails by far. Some failing contacts may slip through relaxed test conditions-the majority of them, though, still work and indicate a potential of reliability problems as could be demonstrated on chips failing the burn-in. Thus, an analysis and classification of the contacts at the wafer level in the presented way allows an identification and first step to estimation of reliability yield risks. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Quality & Reliability Engineering International is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=14477433
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1002/(SICI)1099-1638(199607)12:4<259::AID-QRE36>3.0.CO;2-6
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 259
    Subjects:
      – SubjectFull: Reverse engineering
        Type: general
      – SubjectFull: Tungsten
        Type: general
      – SubjectFull: Reliability in engineering
        Type: general
      – SubjectFull: Systems engineering
        Type: general
      – SubjectFull: Maintainability (Engineering)
        Type: general
      – SubjectFull: Microelectronics
        Type: general
    Titles:
      – TitleFull: LOCALIZATION OF SOFT TUNGSTEN CONTACT FAILS WITH RELIABILITY IMPLICATIONS BY INNOVATIVE REVERSE ENGINEERING TECHNIQUES.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Touzel, J.
      – PersonEntity:
          Name:
            NameFull: Neumann, I.
      – PersonEntity:
          Name:
            NameFull: Lorenz, H.
      – PersonEntity:
          Name:
            NameFull: Boit, C.
      – PersonEntity:
          Name:
            NameFull: Köner, H.
      – PersonEntity:
          Name:
            NameFull: Schurg, S.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 07
              Text: Jul/Aug96
              Type: published
              Y: 1996
          Identifiers:
            – Type: issn-print
              Value: 07488017
          Numbering:
            – Type: volume
              Value: 12
            – Type: issue
              Value: 4
          Titles:
            – TitleFull: Quality & Reliability Engineering International
              Type: main
ResultId 1