Polycrystalline SiC growth and characterization
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| Title: | Polycrystalline SiC growth and characterization |
|---|---|
| Authors: | Ricciardi, C.1 carlo.ricciardi@polito.it, Aimo Boot, E.1, Giorgis, F.1, Mandracci, P.1, Meotto, U.M.1, Barucca, G.2 |
| Source: | Applied Surface Science. Nov2004, Vol. 238 Issue 1-4, p331-335. 5p. |
| Subjects: | Silicon, Spectrum analysis, Raman spectroscopy, Polycrystals |
| Abstract: | Growth of 3C–SiC on (1 0 0) Si wafers has been carried out by low pressure chemical vapor deposition (LPCVD), using a H2 + SiH4 + C3H8 gas mixture at about 1000 °C. No carbonization layer was performed. Micro-Raman measurements yield the presence of microcrystalline SiC matrix, while neither carbon nor silicon clusterization in amorphous phase was detected with optimized deposition conditions. Transmission electron microscopy has been used to analyze the orientation of the films and the surface growth: the presence of voids and edge dislocations at the interface was revealed. [Copyright &y& Elsevier] |
| Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 14512423 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Polycrystalline SiC growth and characterization – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Ricciardi%2C+C%2E%22">Ricciardi, C.</searchLink><relatesTo>1</relatesTo><i> carlo.ricciardi@polito.it</i><br /><searchLink fieldCode="AR" term="%22Aimo+Boot%2C+E%2E%22">Aimo Boot, E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Giorgis%2C+F%2E%22">Giorgis, F.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Mandracci%2C+P%2E%22">Mandracci, P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Meotto%2C+U%2EM%2E%22">Meotto, U.M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Barucca%2C+G%2E%22">Barucca, G.</searchLink><relatesTo>2</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Surface+Science%22">Applied Surface Science</searchLink>. Nov2004, Vol. 238 Issue 1-4, p331-335. 5p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Spectrum+analysis%22">Spectrum analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Raman+spectroscopy%22">Raman spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Polycrystals%22">Polycrystals</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Growth of 3C–SiC on (1 0 0) Si wafers has been carried out by low pressure chemical vapor deposition (LPCVD), using a H2 + SiH4 + C3H8 gas mixture at about 1000 °C. No carbonization layer was performed. Micro-Raman measurements yield the presence of microcrystalline SiC matrix, while neither carbon nor silicon clusterization in amorphous phase was detected with optimized deposition conditions. Transmission electron microscopy has been used to analyze the orientation of the films and the surface growth: the presence of voids and edge dislocations at the interface was revealed. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.apsusc.2004.05.225 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 331 Subjects: – SubjectFull: Silicon Type: general – SubjectFull: Spectrum analysis Type: general – SubjectFull: Raman spectroscopy Type: general – SubjectFull: Polycrystals Type: general Titles: – TitleFull: Polycrystalline SiC growth and characterization Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Ricciardi, C. – PersonEntity: Name: NameFull: Aimo Boot, E. – PersonEntity: Name: NameFull: Giorgis, F. – PersonEntity: Name: NameFull: Mandracci, P. – PersonEntity: Name: NameFull: Meotto, U.M. – PersonEntity: Name: NameFull: Barucca, G. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 11 Text: Nov2004 Type: published Y: 2004 Identifiers: – Type: issn-print Value: 01694332 Numbering: – Type: volume Value: 238 – Type: issue Value: 1-4 Titles: – TitleFull: Applied Surface Science Type: main |
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