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Mechanisms of Variation of the Unipolarity during Thermal Processing of Heavily Doped LiNbO3:ZnO Crystals.

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Title: Mechanisms of Variation of the Unipolarity during Thermal Processing of Heavily Doped LiNbO3:ZnO Crystals.
Authors: Palatnikov, M. N.1 (AUTHOR) palat_mn@chemy.kolasc.net.ru, Sandler, V. A.1 (AUTHOR), Sidorov, N. V.1 (AUTHOR), Makarova, O. V.1 (AUTHOR)
Source: Technical Physics. Aug2020, Vol. 65 Issue 8, p1246-1252. 7p.
Subjects: Crystals, Domain walls (String models), Charge carriers, Charge injection, Crystal structure
Abstract: The phenomenological mechanisms for increasing the unipolarity under thermal processing in the short-circuiting conditions for heavily doped LiNbO3:ZnO crystals are analyzed by comparing with the temperature behavior of nominally pure LiNbO3:ZnO crystals with the congruent composition. It is shown that an increase in the unipolarity and, hence, the disappearance of the domain structure in heavily doped LiNbO3:ZnO crystals is initiated by thermal decomposition of charged polar clusters stabilizing domain walls. The decomposition of polar clusters is accompanied with an abrupt jumpwise injection of extra charge carriers (Li+ cations). As a result, the conductivity of LiNbO3:ZnO crystals at a temperature above 800 K is an order of magnitude higher than that of nominally pure LiNbO3 crystals with the congruent composition. This leads to the degradation of the domain structure in LiNbO3:ZnO crystals in contrast to LiNbO3 crystals with the congruent composition. [ABSTRACT FROM AUTHOR]
Copyright of Technical Physics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: The phenomenological mechanisms for increasing the unipolarity under thermal processing in the short-circuiting conditions for heavily doped LiNbO3:ZnO crystals are analyzed by comparing with the temperature behavior of nominally pure LiNbO3:ZnO crystals with the congruent composition. It is shown that an increase in the unipolarity and, hence, the disappearance of the domain structure in heavily doped LiNbO3:ZnO crystals is initiated by thermal decomposition of charged polar clusters stabilizing domain walls. The decomposition of polar clusters is accompanied with an abrupt jumpwise injection of extra charge carriers (Li+ cations). As a result, the conductivity of LiNbO3:ZnO crystals at a temperature above 800 K is an order of magnitude higher than that of nominally pure LiNbO3 crystals with the congruent composition. This leads to the degradation of the domain structure in LiNbO3:ZnO crystals in contrast to LiNbO3 crystals with the congruent composition. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Technical Physics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – SubjectFull: Charge carriers
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