APA (7th ed.) Citation

Greco, G., Franco, S. D., Bongiorno, C., Grzanka, E., Leszczynski, M., Giannazzo, F., & Roccaforte, F. (2020). Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures. Semiconductor Science & Technology, 35(10), 1. https://doi.org/10.1088/1361-6641/aba288

Chicago Style (17th ed.) Citation

Greco, G., S Di Franco, C. Bongiorno, E. Grzanka, M. Leszczynski, F. Giannazzo, and F. Roccaforte. "Thermal Annealing Effect on Electrical and Structural Properties of Tungsten Carbide Schottky Contacts on AlGaN/GaN Heterostructures." Semiconductor Science & Technology 35, no. 10 (2020): 1. https://doi.org/10.1088/1361-6641/aba288.

MLA (9th ed.) Citation

Greco, G., et al. "Thermal Annealing Effect on Electrical and Structural Properties of Tungsten Carbide Schottky Contacts on AlGaN/GaN Heterostructures." Semiconductor Science & Technology, vol. 35, no. 10, 2020, p. 1, https://doi.org/10.1088/1361-6641/aba288.