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Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures.

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Title: Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures.
Authors: Greco, G (AUTHOR) giuseppe.greco@imm.cnr.it, Franco, S Di (AUTHOR), Bongiorno, C (AUTHOR), Grzanka, E (AUTHOR), Leszczynski, M (AUTHOR), Giannazzo, F (AUTHOR), Roccaforte, F (AUTHOR)
Source: Semiconductor Science & Technology. Oct2020, Vol. 35 Issue 10, p1-8. 8p.
Subjects: Electron energy loss spectroscopy, Tungsten carbide, Heterostructures, Schottky barrier diodes, Schottky barrier, Transmission electron microscopy
Abstract: Tungsten carbide (WC) contacts have been investigated as an original gold-free Schottky metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural/compositional properties of the WC/AlGaN contact has been monitored as a function of the annealing temperature in the range from 400 to 800 °C. The Schottky barrier height (ΦB) at the WC/AlGaN interface, extracted from the forward current-voltage characteristics of the diode, decreased from 0.82–0.85 eV in the as-deposited and 400 °C annealed sample, to 0.56 eV after annealing at 800 °C. This large reduction of ΦB was accompanied by a corresponding increase of the reverse leakage current. Transmission electron microscopy coupled with electron energy loss spectroscopy analyses revealed the presence of oxygen (O) uniformly distributed in the WC layer, both in the as-deposited and 400 °C annealed sample. Conversely, oxygen accumulation in a 2–3 nm thin W-O-C layer at the interface with AlGaN was observed after the annealing at 800 °C, as well as the formation of W2C grains within the film (confirmed by x-ray diffraction analyses). The formation of this interfacial W-O-C layer is plausibly the main origin of the decreased ΦB and the increased leakage current in the 800 °C annealed Schottky diode, whereas the decreased O content inside the WC film can explain the reduced resistivity of the metal layer. The results provide an assessment of the processing conditions for the application of WC as Schottky contact for AlGaN/GaN heterostructures. [ABSTRACT FROM AUTHOR]
Copyright of Semiconductor Science & Technology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
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  Data: Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures.
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  Data: <searchLink fieldCode="AR" term="%22Greco%2C+G%22">Greco, G</searchLink> (AUTHOR)<i> giuseppe.greco@imm.cnr.it</i><br /><searchLink fieldCode="AR" term="%22Franco%2C+S+Di%22">Franco, S Di</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bongiorno%2C+C%22">Bongiorno, C</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Grzanka%2C+E%22">Grzanka, E</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Leszczynski%2C+M%22">Leszczynski, M</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Giannazzo%2C+F%22">Giannazzo, F</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Roccaforte%2C+F%22">Roccaforte, F</searchLink> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>. Oct2020, Vol. 35 Issue 10, p1-8. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Electron+energy+loss+spectroscopy%22">Electron energy loss spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Tungsten+carbide%22">Tungsten carbide</searchLink><br /><searchLink fieldCode="DE" term="%22Heterostructures%22">Heterostructures</searchLink><br /><searchLink fieldCode="DE" term="%22Schottky+barrier+diodes%22">Schottky barrier diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Schottky+barrier%22">Schottky barrier</searchLink><br /><searchLink fieldCode="DE" term="%22Transmission+electron+microscopy%22">Transmission electron microscopy</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Tungsten carbide (WC) contacts have been investigated as an original gold-free Schottky metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural/compositional properties of the WC/AlGaN contact has been monitored as a function of the annealing temperature in the range from 400 to 800 °C. The Schottky barrier height (ΦB) at the WC/AlGaN interface, extracted from the forward current-voltage characteristics of the diode, decreased from 0.82–0.85 eV in the as-deposited and 400 °C annealed sample, to 0.56 eV after annealing at 800 °C. This large reduction of ΦB was accompanied by a corresponding increase of the reverse leakage current. Transmission electron microscopy coupled with electron energy loss spectroscopy analyses revealed the presence of oxygen (O) uniformly distributed in the WC layer, both in the as-deposited and 400 °C annealed sample. Conversely, oxygen accumulation in a 2–3 nm thin W-O-C layer at the interface with AlGaN was observed after the annealing at 800 °C, as well as the formation of W2C grains within the film (confirmed by x-ray diffraction analyses). The formation of this interfacial W-O-C layer is plausibly the main origin of the decreased ΦB and the increased leakage current in the 800 °C annealed Schottky diode, whereas the decreased O content inside the WC film can explain the reduced resistivity of the metal layer. The results provide an assessment of the processing conditions for the application of WC as Schottky contact for AlGaN/GaN heterostructures. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Semiconductor Science & Technology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1088/1361-6641/aba288
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      – SubjectFull: Transmission electron microscopy
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      – TitleFull: Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures.
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              Text: Oct2020
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