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Magnetic field effect on spin-polarized transport in asymmetric multibarrier based on InAs/GaAs/GaSb systems.

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Title: Magnetic field effect on spin-polarized transport in asymmetric multibarrier based on InAs/GaAs/GaSb systems.
Authors: Dakhlaoui, Hassen1,2 (AUTHOR) hbaldkhlaen@iau.edu.sa, Nefzi, Mouna3 (AUTHOR), Al-Shameri, Najla S.1,2 (AUTHOR), Al Suwaidan, Alanoud1,2 (AUTHOR), Elmobkey, Hadeel1,2 (AUTHOR), Almansour, Shaffa1,2 (AUTHOR), Alnaim, Ibtessam1,2 (AUTHOR)
Source: Physica B. Nov2020, Vol. 597, pN.PAG-N.PAG. 1p.
Subjects: Magnetic field effects, Spin polarization, Polarized electrons, Auditing standards, Transfer matrix, Spin-orbit interactions
Abstract: This paper investigates how an applied magnetic field, the quantum size, and spin polarization effect an asymmetric heterostructure composed of InAs, GaAs, and GaSb semiconductors. Using a theoretical approach based on the transfer matrix method and taking into account the Rashba and Dresselhaus spin-orbit interactions, we calculate the spin-dependent transmissions of spin-up and -down electrons and their spin polarization across our heterostructure. Our results indicate that the transmission coefficients and the resonance states can be tuned to a red or blue shift by adjusting the quantum wells and the barrier widths. Two resonance states are detected when the width of the central barrier L bc is reduced. Furthermore, we show that the impact of an applied magnetic field on the spin polarization can polarize 100% of either spin -up or -down electrons by selecting the appropriate range of incident energy and suitable magnetic field. These results are useful for the design and fabrications of spin-filter devices operating under an applied magnetic field. [ABSTRACT FROM AUTHOR]
Copyright of Physica B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 145679157
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Magnetic field effect on spin-polarized transport in asymmetric multibarrier based on InAs/GaAs/GaSb systems.
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  Label: Authors
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  Data: <searchLink fieldCode="AR" term="%22Dakhlaoui%2C+Hassen%22">Dakhlaoui, Hassen</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> hbaldkhlaen@iau.edu.sa</i><br /><searchLink fieldCode="AR" term="%22Nefzi%2C+Mouna%22">Nefzi, Mouna</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Al-Shameri%2C+Najla+S%2E%22">Al-Shameri, Najla S.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Al+Suwaidan%2C+Alanoud%22">Al Suwaidan, Alanoud</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Elmobkey%2C+Hadeel%22">Elmobkey, Hadeel</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Almansour%2C+Shaffa%22">Almansour, Shaffa</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Alnaim%2C+Ibtessam%22">Alnaim, Ibtessam</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Physica+B%22">Physica B</searchLink>. Nov2020, Vol. 597, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Magnetic+field+effects%22">Magnetic field effects</searchLink><br /><searchLink fieldCode="DE" term="%22Spin+polarization%22">Spin polarization</searchLink><br /><searchLink fieldCode="DE" term="%22Polarized+electrons%22">Polarized electrons</searchLink><br /><searchLink fieldCode="DE" term="%22Auditing+standards%22">Auditing standards</searchLink><br /><searchLink fieldCode="DE" term="%22Transfer+matrix%22">Transfer matrix</searchLink><br /><searchLink fieldCode="DE" term="%22Spin-orbit+interactions%22">Spin-orbit interactions</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This paper investigates how an applied magnetic field, the quantum size, and spin polarization effect an asymmetric heterostructure composed of InAs, GaAs, and GaSb semiconductors. Using a theoretical approach based on the transfer matrix method and taking into account the Rashba and Dresselhaus spin-orbit interactions, we calculate the spin-dependent transmissions of spin-up and -down electrons and their spin polarization across our heterostructure. Our results indicate that the transmission coefficients and the resonance states can be tuned to a red or blue shift by adjusting the quantum wells and the barrier widths. Two resonance states are detected when the width of the central barrier L bc is reduced. Furthermore, we show that the impact of an applied magnetic field on the spin polarization can polarize 100% of either spin -up or -down electrons by selecting the appropriate range of incident energy and suitable magnetic field. These results are useful for the design and fabrications of spin-filter devices operating under an applied magnetic field. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Physica B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.physb.2020.412403
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      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Magnetic field effects
        Type: general
      – SubjectFull: Spin polarization
        Type: general
      – SubjectFull: Polarized electrons
        Type: general
      – SubjectFull: Auditing standards
        Type: general
      – SubjectFull: Transfer matrix
        Type: general
      – SubjectFull: Spin-orbit interactions
        Type: general
    Titles:
      – TitleFull: Magnetic field effect on spin-polarized transport in asymmetric multibarrier based on InAs/GaAs/GaSb systems.
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            NameFull: Dakhlaoui, Hassen
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            NameFull: Al Suwaidan, Alanoud
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            NameFull: Elmobkey, Hadeel
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              Text: Nov2020
              Type: published
              Y: 2020
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              Value: 597
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