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Hard X‐ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces.

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Title: Hard X‐ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces.
Authors: Romanyuk, Oleksandr1 (AUTHOR) romanyuk@fzu.cz, Supplie, Oliver2 (AUTHOR), Paszuk, Agnieszka2 (AUTHOR), Stoeckmann, Jan Philipp2 (AUTHOR), Wilks, Regan George3,4 (AUTHOR), Bombsch, Jakob3 (AUTHOR), Hartmann, Claudia3 (AUTHOR), Garcia‐Diez, Raul3 (AUTHOR), Ueda, Shigenori5 (AUTHOR), Bartoš, Igor1 (AUTHOR), Gordeev, Ivan1 (AUTHOR), Houdkova, Jana1 (AUTHOR), Kleinschmidt, Peter2 (AUTHOR), Bär, Marcus3,4,6,7 (AUTHOR), Jiříček, Petr1 (AUTHOR), Hannappel, Thomas2 (AUTHOR)
Source: Surface & Interface Analysis: SIA. Dec2020, Vol. 52 Issue 12, p933-938. 6p.
Subjects: Hard X-rays, Valence fluctuations, X-ray photoelectron spectroscopy, Band gaps, Valence bands, Experimental films
Abstract: We present a study of buried GaP/Si(001) heterointerfaces by hard X‐ray photoelectron spectroscopy. Well‐defined thin (4–50 nm) GaP films were grown on Si(001) substrates with 2° miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested. [ABSTRACT FROM AUTHOR]
Copyright of Surface & Interface Analysis: SIA is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Hard X‐ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces.
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  Data: <searchLink fieldCode="AR" term="%22Romanyuk%2C+Oleksandr%22">Romanyuk, Oleksandr</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> romanyuk@fzu.cz</i><br /><searchLink fieldCode="AR" term="%22Supplie%2C+Oliver%22">Supplie, Oliver</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Paszuk%2C+Agnieszka%22">Paszuk, Agnieszka</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Stoeckmann%2C+Jan+Philipp%22">Stoeckmann, Jan Philipp</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wilks%2C+Regan+George%22">Wilks, Regan George</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bombsch%2C+Jakob%22">Bombsch, Jakob</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hartmann%2C+Claudia%22">Hartmann, Claudia</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Garcia‐Diez%2C+Raul%22">Garcia‐Diez, Raul</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ueda%2C+Shigenori%22">Ueda, Shigenori</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bartoš%2C+Igor%22">Bartoš, Igor</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gordeev%2C+Ivan%22">Gordeev, Ivan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Houdkova%2C+Jana%22">Houdkova, Jana</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kleinschmidt%2C+Peter%22">Kleinschmidt, Peter</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bär%2C+Marcus%22">Bär, Marcus</searchLink><relatesTo>3,4,6,7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jiříček%2C+Petr%22">Jiříček, Petr</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hannappel%2C+Thomas%22">Hannappel, Thomas</searchLink><relatesTo>2</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Surface+%26+Interface+Analysis%3A+SIA%22">Surface & Interface Analysis: SIA</searchLink>. Dec2020, Vol. 52 Issue 12, p933-938. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Hard+X-rays%22">Hard X-rays</searchLink><br /><searchLink fieldCode="DE" term="%22Valence+fluctuations%22">Valence fluctuations</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+photoelectron+spectroscopy%22">X-ray photoelectron spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Valence+bands%22">Valence bands</searchLink><br /><searchLink fieldCode="DE" term="%22Experimental+films%22">Experimental films</searchLink>
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  Label: Abstract
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  Data: We present a study of buried GaP/Si(001) heterointerfaces by hard X‐ray photoelectron spectroscopy. Well‐defined thin (4–50 nm) GaP films were grown on Si(001) substrates with 2° miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Surface & Interface Analysis: SIA is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1002/sia.6829
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        Text: English
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      – SubjectFull: Valence fluctuations
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      – SubjectFull: X-ray photoelectron spectroscopy
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      – SubjectFull: Band gaps
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      – SubjectFull: Valence bands
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      – SubjectFull: Experimental films
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