Hard X‐ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces.
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| Title: | Hard X‐ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces. |
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| Authors: | Romanyuk, Oleksandr1 (AUTHOR) romanyuk@fzu.cz, Supplie, Oliver2 (AUTHOR), Paszuk, Agnieszka2 (AUTHOR), Stoeckmann, Jan Philipp2 (AUTHOR), Wilks, Regan George3,4 (AUTHOR), Bombsch, Jakob3 (AUTHOR), Hartmann, Claudia3 (AUTHOR), Garcia‐Diez, Raul3 (AUTHOR), Ueda, Shigenori5 (AUTHOR), Bartoš, Igor1 (AUTHOR), Gordeev, Ivan1 (AUTHOR), Houdkova, Jana1 (AUTHOR), Kleinschmidt, Peter2 (AUTHOR), Bär, Marcus3,4,6,7 (AUTHOR), Jiříček, Petr1 (AUTHOR), Hannappel, Thomas2 (AUTHOR) |
| Source: | Surface & Interface Analysis: SIA. Dec2020, Vol. 52 Issue 12, p933-938. 6p. |
| Subjects: | Hard X-rays, Valence fluctuations, X-ray photoelectron spectroscopy, Band gaps, Valence bands, Experimental films |
| Abstract: | We present a study of buried GaP/Si(001) heterointerfaces by hard X‐ray photoelectron spectroscopy. Well‐defined thin (4–50 nm) GaP films were grown on Si(001) substrates with 2° miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | We present a study of buried GaP/Si(001) heterointerfaces by hard X‐ray photoelectron spectroscopy. Well‐defined thin (4–50 nm) GaP films were grown on Si(001) substrates with 2° miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 01422421 |
| DOI: | 10.1002/sia.6829 |
