Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC.
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| Title: | Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC. |
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| Authors: | Vivona, M (AUTHOR) marilena.vivona@imm.cnr.it, Greco, G (AUTHOR), Bellocchi, G (AUTHOR), Zumbo, L (AUTHOR), Franco, S Di (AUTHOR), Saggio, M (AUTHOR), Rascunŕ, S (AUTHOR), Roccaforte, F (AUTHOR) |
| Source: | Journal of Physics D: Applied Physics. 2/4/2021, Vol. 54 Issue 5-7, p1-7. 7p. |
| Subjects: | Schottky barrier, Tungsten carbide, Schottky barrier diodes, Distribution (Probability theory), Field emission |
| Abstract: | In this paper, the electrical behavior of tungsten carbide (WC) Schottky barrier on 4H-SiC was investigated. First, a statistical current-voltage (I–V) analysis in forward bias, performed on a set of equivalent diodes, showed a symmetric Gaussian-like distribution of the barrier heights after annealing at 700 °C, where a low Schottky barrier height (ΦB = 1.05 eV) and an ideality factor n = 1.06 were measured. The low value of the barrier height makes such a WC contact an interesting candidate to reduce the conduction losses in 4H-SiC Schottky diodes. A deeper characterization has been carried out, by monitoring the temperature dependence of the I–V characteristics and the behavior of the relevant parameters ΦB and n. The increase of the barrier height and decrease of the ideality factor with increasing temperature indicated a lateral inhomogeneity of the WC/4H-SiC Schottky contact, which was described by invoking Tung's model. Interestingly, the temperature dependence of the leakage current under reverse bias could be described by considering in the thermionic field emission model the temperature dependent barrier height related to the inhomogeneity. These results can be useful to predict the behavior of WC/4H-SiC Schottky diodes under operative conditions. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Physics D: Applied Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 147616862 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Vivona%2C+M%22">Vivona, M</searchLink> (AUTHOR)<i> marilena.vivona@imm.cnr.it</i><br /><searchLink fieldCode="AR" term="%22Greco%2C+G%22">Greco, G</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bellocchi%2C+G%22">Bellocchi, G</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zumbo%2C+L%22">Zumbo, L</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Franco%2C+S+Di%22">Franco, S Di</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Saggio%2C+M%22">Saggio, M</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Rascunŕ%2C+S%22">Rascunŕ, S</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Roccaforte%2C+F%22">Roccaforte, F</searchLink> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Physics+D%3A+Applied+Physics%22">Journal of Physics D: Applied Physics</searchLink>. 2/4/2021, Vol. 54 Issue 5-7, p1-7. 7p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Schottky+barrier%22">Schottky barrier</searchLink><br /><searchLink fieldCode="DE" term="%22Tungsten+carbide%22">Tungsten carbide</searchLink><br /><searchLink fieldCode="DE" term="%22Schottky+barrier+diodes%22">Schottky barrier diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Distribution+%28Probability+theory%29%22">Distribution (Probability theory)</searchLink><br /><searchLink fieldCode="DE" term="%22Field+emission%22">Field emission</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In this paper, the electrical behavior of tungsten carbide (WC) Schottky barrier on 4H-SiC was investigated. First, a statistical current-voltage (I–V) analysis in forward bias, performed on a set of equivalent diodes, showed a symmetric Gaussian-like distribution of the barrier heights after annealing at 700 °C, where a low Schottky barrier height (ΦB = 1.05 eV) and an ideality factor n = 1.06 were measured. The low value of the barrier height makes such a WC contact an interesting candidate to reduce the conduction losses in 4H-SiC Schottky diodes. A deeper characterization has been carried out, by monitoring the temperature dependence of the I–V characteristics and the behavior of the relevant parameters ΦB and n. The increase of the barrier height and decrease of the ideality factor with increasing temperature indicated a lateral inhomogeneity of the WC/4H-SiC Schottky contact, which was described by invoking Tung's model. Interestingly, the temperature dependence of the leakage current under reverse bias could be described by considering in the thermionic field emission model the temperature dependent barrier height related to the inhomogeneity. These results can be useful to predict the behavior of WC/4H-SiC Schottky diodes under operative conditions. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Physics D: Applied Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1088/1361-6463/abbd65 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 1 Subjects: – SubjectFull: Schottky barrier Type: general – SubjectFull: Tungsten carbide Type: general – SubjectFull: Schottky barrier diodes Type: general – SubjectFull: Distribution (Probability theory) Type: general – SubjectFull: Field emission Type: general Titles: – TitleFull: Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Vivona, M – PersonEntity: Name: NameFull: Greco, G – PersonEntity: Name: NameFull: Bellocchi, G – PersonEntity: Name: NameFull: Zumbo, L – PersonEntity: Name: NameFull: Franco, S Di – PersonEntity: Name: NameFull: Saggio, M – PersonEntity: Name: NameFull: Rascunŕ, S – PersonEntity: Name: NameFull: Roccaforte, F IsPartOfRelationships: – BibEntity: Dates: – D: 04 M: 02 Text: 2/4/2021 Type: published Y: 2021 Identifiers: – Type: issn-print Value: 00223727 Numbering: – Type: volume Value: 54 – Type: issue Value: 5-7 Titles: – TitleFull: Journal of Physics D: Applied Physics Type: main |
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