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Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs.

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Title: Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs.
Authors: Alim, Mohammad A.1 (AUTHOR) mohammadabdulalim@cu.ac.bd, Ali, Mayahsa M.2 (AUTHOR) drmayali.uoitc@uoitc.edu.iq, Gaquiere, Christophe3 (AUTHOR)
Source: International Journal of RF & Microwave Computer-Aided Engineering. Feb2021, Vol. 31 Issue 2, p1-10. 10p.
Subjects: Intermodulation distortion, Insight
Abstract: This research is about investigating the third‐order intercept point (TOI) and nonlinear distortion level (NDL) for two GaN HEMTs of different gate lengths with temperature and frequency. As a multi‐biasing, input power, frequency and temperature‐dependent term; the TOI point and as well as the nonlinear distortion level are particular figures merit relevant to the third‐order intermodulation distortion (IMD3) product. The primary results are the output referenced TOI reduced whereas the input referenced TOI raised as the frequency goes higher and the lower gated device exhibits a bit greater magnitude. Over the temperature range measured; the magnitude of TOI and nonlinear distortion considerably changed in accordance to the performance of third order intermodulation distortion (IMD3) component. This investigation of TOI is used to determine what extent distortion is generated, and comparing that to the entryway of the antenna provides a clear strategy for determining if the spec can be met or not. However, distortion level investigation is a critical point to choose the best biasing preference with the device's inlet measurements to establish a solution that fits with the intended usage. [ABSTRACT FROM AUTHOR]
Copyright of International Journal of RF & Microwave Computer-Aided Engineering is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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An: 147924360
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Alim%2C+Mohammad+A%2E%22">Alim, Mohammad A.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> mohammadabdulalim@cu.ac.bd</i><br /><searchLink fieldCode="AR" term="%22Ali%2C+Mayahsa+M%2E%22">Ali, Mayahsa M.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> drmayali.uoitc@uoitc.edu.iq</i><br /><searchLink fieldCode="AR" term="%22Gaquiere%2C+Christophe%22">Gaquiere, Christophe</searchLink><relatesTo>3</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22International+Journal+of+RF+%26+Microwave+Computer-Aided+Engineering%22">International Journal of RF & Microwave Computer-Aided Engineering</searchLink>. Feb2021, Vol. 31 Issue 2, p1-10. 10p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Intermodulation+distortion%22">Intermodulation distortion</searchLink><br /><searchLink fieldCode="DE" term="%22Insight%22">Insight</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This research is about investigating the third‐order intercept point (TOI) and nonlinear distortion level (NDL) for two GaN HEMTs of different gate lengths with temperature and frequency. As a multi‐biasing, input power, frequency and temperature‐dependent term; the TOI point and as well as the nonlinear distortion level are particular figures merit relevant to the third‐order intermodulation distortion (IMD3) product. The primary results are the output referenced TOI reduced whereas the input referenced TOI raised as the frequency goes higher and the lower gated device exhibits a bit greater magnitude. Over the temperature range measured; the magnitude of TOI and nonlinear distortion considerably changed in accordance to the performance of third order intermodulation distortion (IMD3) component. This investigation of TOI is used to determine what extent distortion is generated, and comparing that to the entryway of the antenna provides a clear strategy for determining if the spec can be met or not. However, distortion level investigation is a critical point to choose the best biasing preference with the device's inlet measurements to establish a solution that fits with the intended usage. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of International Journal of RF & Microwave Computer-Aided Engineering is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1002/mmce.22513
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 1
    Subjects:
      – SubjectFull: Intermodulation distortion
        Type: general
      – SubjectFull: Insight
        Type: general
    Titles:
      – TitleFull: Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Alim, Mohammad A.
      – PersonEntity:
          Name:
            NameFull: Ali, Mayahsa M.
      – PersonEntity:
          Name:
            NameFull: Gaquiere, Christophe
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 02
              Text: Feb2021
              Type: published
              Y: 2021
          Identifiers:
            – Type: issn-print
              Value: 10964290
          Numbering:
            – Type: volume
              Value: 31
            – Type: issue
              Value: 2
          Titles:
            – TitleFull: International Journal of RF & Microwave Computer-Aided Engineering
              Type: main
ResultId 1