Random telegraph signals originating from unrelaxed neutral oxygen vacancy centres in SiO2.
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| Title: | Random telegraph signals originating from unrelaxed neutral oxygen vacancy centres in SiO |
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| Authors: | Nour, M.1 (AUTHOR), Çelik‐Butler, Z.1 (AUTHOR) zbutler@uta.edu, Sonnet, A.2 (AUTHOR), Hou, F.C.2 (AUTHOR), Tang, S.2 (AUTHOR) |
| Source: | Electronics Letters (Wiley-Blackwell). Oct2015, Vol. 51 Issue 20, p1610-1611. 2p. |
| Abstract: | Unrelaxed neutral oxygen deficiency centres (ODCs) (V0 ODC II) in SiO2 have been identified as the cause of random telegraph signals (RTSs) in highly scaled n‐type metal–oxide–semiconductor field‐effect transistors. Variable temperature RTS measurements were performed to extract trap capture cross‐sections, capture activation energy, relaxation energy associated with the gate oxide defects, and the trap energy in the SiO2 bandgap to determine the trap species and type. The results indicate that the electron is captured by a neutral ODC that is transformed into a negatively charged vacancy (V−). This is the first time V0 ODC II centre is confirmed to be the source of electron switching through RTS measurements defining four different trap characteristics. [ABSTRACT FROM AUTHOR] |
| Copyright of Electronics Letters (Wiley-Blackwell) is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 148783712 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Random telegraph signals originating from unrelaxed neutral oxygen vacancy centres in SiO<subscript>2</subscript>. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Nour%2C+M%2E%22">Nour, M.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Çelik‐Butler%2C+Z%2E%22">Çelik‐Butler, Z.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> zbutler@uta.edu</i><br /><searchLink fieldCode="AR" term="%22Sonnet%2C+A%2E%22">Sonnet, A.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hou%2C+F%2EC%2E%22">Hou, F.C.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tang%2C+S%2E%22">Tang, S.</searchLink><relatesTo>2</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Electronics+Letters+%28Wiley-Blackwell%29%22">Electronics Letters (Wiley-Blackwell)</searchLink>. Oct2015, Vol. 51 Issue 20, p1610-1611. 2p. – Name: Abstract Label: Abstract Group: Ab Data: Unrelaxed neutral oxygen deficiency centres (ODCs) (V0 ODC II) in SiO2 have been identified as the cause of random telegraph signals (RTSs) in highly scaled n‐type metal–oxide–semiconductor field‐effect transistors. Variable temperature RTS measurements were performed to extract trap capture cross‐sections, capture activation energy, relaxation energy associated with the gate oxide defects, and the trap energy in the SiO2 bandgap to determine the trap species and type. The results indicate that the electron is captured by a neutral ODC that is transformed into a negatively charged vacancy (V−). This is the first time V0 ODC II centre is confirmed to be the source of electron switching through RTS measurements defining four different trap characteristics. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Electronics Letters (Wiley-Blackwell) is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1049/el.2015.2074 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 2 StartPage: 1610 Titles: – TitleFull: Random telegraph signals originating from unrelaxed neutral oxygen vacancy centres in SiO2. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Nour, M. – PersonEntity: Name: NameFull: Çelik‐Butler, Z. – PersonEntity: Name: NameFull: Sonnet, A. – PersonEntity: Name: NameFull: Hou, F.C. – PersonEntity: Name: NameFull: Tang, S. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 10 Text: Oct2015 Type: published Y: 2015 Identifiers: – Type: issn-print Value: 00135194 Numbering: – Type: volume Value: 51 – Type: issue Value: 20 Titles: – TitleFull: Electronics Letters (Wiley-Blackwell) Type: main |
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