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Stable p-type chemical doping of graphene with reduced contact resistance by single-layer perfluorinated polymeric sulfonic acid.

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Title: Stable p-type chemical doping of graphene with reduced contact resistance by single-layer perfluorinated polymeric sulfonic acid.
Authors: Zhang, Xiao-rui (AUTHOR), Yao, Yao (AUTHOR), Peng, Song-ang (AUTHOR), Zhu, Chao-yi (AUTHOR), Huang, Xin-nan (AUTHOR), Yan, Yun-peng (AUTHOR), Zhang, Da-yong (AUTHOR), Shi, Jing-yuan (AUTHOR), Jin, Zhi (AUTHOR) jinzhi@ime.ac.cn
Source: Nanotechnology. 4/9/2021, Vol. 32 Issue 15, p1-7. 7p.
Subjects: Graphene, Doping agents (Chemistry), Field-effect transistors, Nafion
Abstract: Recently, graphene has led to unprecedented progress in device performance at the atom limit. A high performance of field-effect transistors requires a low graphene–metal contact resistance. However, the chemical doping methods used to tailor or improve the properties of graphene are sensitive to ambient conditions. Here, we fabricate a single-layer perfluorinated polymeric sulfonic acid (PFSA), also known as Nafion, between the graphene and the substrate as a p-type dopant. The PFSA doping method, without inducing any additional structural defects, reduces the contact resistance of graphene by ∼28.8%, which has a significant impact on practical applications. This reduction can be maintained for at least 67 days due to the extreme stability of PFSA. Effective, uniform and stable, the PFSA doping method provides an efficient way to reduce the contact resistance of graphene applications. [ABSTRACT FROM AUTHOR]
Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 148931463
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Stable p-type chemical doping of graphene with reduced contact resistance by single-layer perfluorinated polymeric sulfonic acid.
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  Data: <searchLink fieldCode="AR" term="%22Zhang%2C+Xiao-rui%22">Zhang, Xiao-rui</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yao%2C+Yao%22">Yao, Yao</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Peng%2C+Song-ang%22">Peng, Song-ang</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhu%2C+Chao-yi%22">Zhu, Chao-yi</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Huang%2C+Xin-nan%22">Huang, Xin-nan</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yan%2C+Yun-peng%22">Yan, Yun-peng</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Da-yong%22">Zhang, Da-yong</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shi%2C+Jing-yuan%22">Shi, Jing-yuan</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jin%2C+Zhi%22">Jin, Zhi</searchLink> (AUTHOR)<i> jinzhi@ime.ac.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanotechnology%22">Nanotechnology</searchLink>. 4/9/2021, Vol. 32 Issue 15, p1-7. 7p.
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  Data: <searchLink fieldCode="DE" term="%22Graphene%22">Graphene</searchLink><br /><searchLink fieldCode="DE" term="%22Doping+agents+%28Chemistry%29%22">Doping agents (Chemistry)</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Nafion%22">Nafion</searchLink>
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  Data: Recently, graphene has led to unprecedented progress in device performance at the atom limit. A high performance of field-effect transistors requires a low graphene–metal contact resistance. However, the chemical doping methods used to tailor or improve the properties of graphene are sensitive to ambient conditions. Here, we fabricate a single-layer perfluorinated polymeric sulfonic acid (PFSA), also known as Nafion, between the graphene and the substrate as a p-type dopant. The PFSA doping method, without inducing any additional structural defects, reduces the contact resistance of graphene by ∼28.8%, which has a significant impact on practical applications. This reduction can be maintained for at least 67 days due to the extreme stability of PFSA. Effective, uniform and stable, the PFSA doping method provides an efficient way to reduce the contact resistance of graphene applications. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1088/1361-6528/abd715
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      – Code: eng
        Text: English
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              Text: 4/9/2021
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